Etching end-point

This is an emission analysis type end-point monitor intended for end-point detection or plasma condition control in the plasma-based semiconductor thin-film process. The newly-developed Rapture Intensity algorithm allows accurate...

Real Time Interferometric Process Monitor provides high precision detection of film thickness and trench depth during the etching/coating process.Interference occurs when monochromatic light hits the sample surface, resulting in...

Real Time Interferometric Process Monitor provides high precision detection of film thickness and trench depth during the etching/coating process.Interference occurs when monochromatic light hits the sample surface, resulting in...