Importance of in situ Monitoring in MOCVD Process and Future Prospects

*Associate Professor of Graduated School of Science and Engineering, Tokyo Institute of Technology

There is growing expectation in hopes of finding new or improved substances with excellent properties through further multiplicate components, in multi-component oxide thin films such as high-temperature superconductors, giant magnetoresistance effect oxides, and ferroelectric oxide. In manufacturing these devices, composition reproducibility that influences properties are important, and MOCVD (Metal Organic Chemical Vapor Deposition) is drawing attention. We will confirm the basic principle of MOCVD such as reaction mechanism in thin fi lm fabrication and the control of compositions, using Pb(Zr,Ti)O3 (PZT) thin film as an examples. We will also explain the effectiveness of Fourier Transform Infrared Spectroscopy (FTIR) as a tool for extracting the optimum conditions for the industrialization process of MOCVD, using hard data. In addition, we will propose a process in which FTIR is installed as an in situ monitor for online feedback controls in the MOCVD process, with excerpts from experiment results. Finally, future prospects will also be discussed.

(Same content in Japanese is in Readout No.32-Japanese edition-.)

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