掲載年

タイトル

著者

掲載誌

2005

Complete wetting transitions at the liquid-vapor interface of gallium-bismuth alloys: Single-wavelength and spectroscopic ellipsometry studiesv

S. Dogel, D. Nattland, and W. Freyland

Phys. Rev. B, 72 (2005) 085403

2003

Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry

Y. Tsuchiya, M. Endoh, M. Kurosawa, R.T. Tung, T. Hattori, and S. Oda

Jpn. J. Appl. Phys., 42 (2003) 1957

2001

In situ ellipsometry of undoped and Ga-doped YBa2Cu3O7-δ films by MOCVD

S. Oda, S. Sugai, and Y. Matsukawa

International Superconductivity Electronics Conference 2001, TM-7

2000

Kinetic study of P and As desorption from binary and ternary III-V semiconductors surface by in situ ellipsometry

O. Féron, Y. Nakano, and Y. Shimogaki

J. Cryst. Growth, 221 (2000) 129

2000

Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE

T. Nakano, Y. Nakano, and Y. Shimogaki

J. Cryst. Growth, 221 (2000) 136

2000

Real time control of plasma deposited optical filters by multiwavelength ellipsometry

T. Heitz, A. Hofrichter, P. Bulkin, and B. Drevillon

J. Vac. Sci. Technol. A, 18 (2000) 1303

2000

Investigation of Crystallization Behavior of Sputter-Deposited Nitrogen-Doped Amorphous Ge2Sb2Te5 thin Films

H. Seo, T.-H. Jeong, J.-W. Park, C. Yeon, S.-J. Kim, and S.-Y. KIM

Jpn. J. Appl. Phys., 39 (2000) 745

2000

GaAs/H2O2 Electrochemical Interface Studied In Situ by Infrared Spectroscopy and Ultraviolet-Visible Ellipsometry Part I: Identification of Chemical Species

B.H. Erne, F. Ozanam, M. Stchakovsky, D. Vanmaekelbergh, and J.-N. Chazalviel

J. Phys. Chem. B, 104 (2000) 5961

2000

GaAs/H2O2 Electrochemical Interface Studied In Situ by Infrared Spectroscopy and Ultraviolet-Visible Ellipsometry Part II: Chemical Origin of Cathodic Oscillations

B.H. Erne, F. Ozanam, M. Stchakovsky, D. Vanmaekelbergh, and J.-N. Chazalviel

J. Phys. Chem. B, 104 (2000) 5974

1999

GaN GROWTH BY REMOTE PLASMA MOCVD: CHEMISTRY AND KINETICS BY REAL TIME ELLIPSOMETRY

M. Losurdo, P. Capezzuto, and G. Bruno

MRS Internet J. Nitride Semicond. Res. 4S1, G3.12(1999)

1999

Crystallization behavior of sputter-deposited amorphous Ge2Sb2Te5 thin films

T.H. Jeong, M.R. Kim, H. Seo, S.J. Kim, and S.Y. Kim

J. Appl. Phys., 86, (1999) 774

1999

In-situ Monitoring of Anodic Oxidation of p-type Si(100) by Electrochemical Impedance Techniques in Nonaqueous and Aqueous Solutions

M.-S. Kim, K.-K. Kim, S.Y. Kim, Y. Kim, Y.H. Won, Y.-I. Choi, and S.-i. Mho

Bull. Korean Chem. Soc., 20 (1999) 1049

1998

In situ ellipsometric characterization of SiN x films grown by laser ablation

E.C. Samano, R. Machorro, G. Soto, L. Cota-Araiza

J. Appl. Phys., 84 (1998) 5298

1998

In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAsrInP heterostructure by spectroscopic and kinetic ellipsometry

S. Sudo, Y. Nakano, M. Sugiyama, Y. Shimogaki, H. Komiyama, and K. Tada

Thin Solid Films, 313-314 (1998) 604

1997

Monitoring of silicon nitride films grown by PLD using real time single photon-energy ellipsometry

G. Soto, R. Machorro, E.C. Sámano, J. Siqueiros, and L. Cota-Araiza

Supreficies y Vacío, 7 (1997) 25

1997

Real-time control by multiwavelength ellipsometry of plasma-deposited multilayers on glass by use of an incoherent-reflection model

M. Kildemo, P. Bulkin, B. Drevillon, and O. Hunderi

Appl. Opt., 36 (1997) 6352

1996

Real time control of plasma deposited multilayers by multiwavelenqth ellipsometry

M. Kildemo, P. Bulkin, S. Deniau, and B. Drevillon

Appl. Phys. Lett., 68 (1996) 3395

1996

In-situ ultrahigh vacuum spectroscopic ellipsometry

T. Fukazawa, K. Ishihara, Y. Hoshi, and S. Kawabata

SPIE Proceedings, 2873 (1996) 180 (International Symposium on Polarization Analysis and Applications to Device Technology)

1995

Ultraviolet-visible ellipsometry for process control during the etching of submicrometer features

N. Blayo, R.A. Cirelli, F.P. Klemens, and J.T.C. Lee

J. Opt. Soc. Am. A, 12 (1995) 591v

1995

Real time monitoring of the growth of transparent thin films by spectroscopic ellipsometryv

M. Kildemo, and B. Drevillon

Appl. Phys. Lett., 67 (1995) 918

1994

In Situ Study of the Interfaces Between Plasma-Deposited Amorphous Silicon and Silicon Dioxide by UV-IR Spectroellipsometry

H. Shirai, R. Ossikovski, and B. Drevillon vvv

Jpn. J. Appl. Phys., 33 (1994) 4177

1994

In situ spectroscopic ellipsometry studies of interfaces of thin films deposited by PECVD

B. Drevillon

Thin Solid Films., 241 (1994) 234

1993

Influence of powder formation in a silane discharge on a-Si:H film growth monitored by in situ ellipsometry

U.I. Schmidt, B. Schroder, and H. Oechsner

J. Non-Cryst. Solids, 164-166 (1993) 127

1991

In situ investigation of the amorphous silicon/silicon nitride interfaces by spectroellipsometry

M. Stchakovsky, B. Drevillon, and P. Roca i Cabarrocas

J. Appl. Phys., 70 (1991) 2132

1989

In situ investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces

B. Drevillon, Satyendra Kumar, P. Roca i Cabarrocas and J.M. Siefert

Appl. Phys. Lett., 54 (1989) 2088

1987

IN-SITU INVESTIGATION OF THE EARLY STAGE OF THE GROWTH OF a-Si:H ON SILICA AND TIN DIOXIDE SUBSTRATES.

A.M. Antoine, and B. Drevillon

J. Non-Cryst. Solids, 97-98 (1987) 1403