
Raman Spectroscopy
Raman-PL
Photoluminescence (PL) spectroscopy is a non-contact, non-destructive method of probing the electronic structure of materials. It is caused by a two step photon absorption-emission process involving the electronic states of the material. The emission of light through this process is photoluminescence. By combining Raman analysis with PL detection, it is possible to characterise both the vibrational and electronic properties of materials on a single bench top platform.
Typical applications include analysis of semiconductor and nano-materials for:
- Band Gap Determination
- Impurity Levels and Defect Detection
- Recombination Mechanisms
- Material Quality
Our combined Raman-PL systems allow confocal mapping capabilities with sub-micron spatial resolution. A wide range of excitation wavelengths is possible, from the UV to NIR, allowing control of the penetration depth into the material, and thus, control of the volume sampled. Systems can be configured with different detectors such as CCD and InGaAs, which provide high sensitivity detection from the UV out to 1.5 µm and beyond. Temperature stages can be used in combination with the Raman-PL systems allowing analysis of samples at temperatures down to 4.2K.

- PL images of 3” MQW semiconductor wafer showing emission wavelength (left) and peak width (right)




