Combining plasma profiling TOFMS with TOF-SIMS depth profiling for microelectronic applications

24 March 2016


Combining plasma profiling TOFMS with TOF-SIMS depth profiling for microelectronic applications

This article has been written in collaboration
with CEA Leti,Grenoble, France.

Read our recent article showing the comparison of TOF-SIMS and Plasma Profiling TOFMS (PP-TOFMS) depth profiles of SiGe, metal silicides,  photovoltaics complex metal/oxide stacks, and PZT, published in Journal of Vacuum Science & Technology B.

 


And discover the unique capabilities of PP-TOFMS as a fast depth profiling tool providing reference free semi-quantification and spontaneous detection of unexpected contaminants.

View the full abstract and access to full article pdf