HORIBA have fostered various analysis, control, and evaluation technologies for the silicon semiconductor manufacturing processes; a field where strict specifications must be satisfied.
HORIBA makes full use of these technologies in the field of FPD processing. These technologies provide manufacturing support for various types of processes, including gas and liquid medication composition, the detection of particles on masks and thin film measurement. These technologies are also being applied to high-performance analytical and control equipment that supports the research and development of PDPs, organic EL, FEDs, and the diversifying and evolving field of FPDs.
Below you can see the different stages during the FPD production process. Please click on each phase in order to see the products that are avaialble to you during this stage.
DI Water Analysis/Waste Water Monitoring
Ever-increasing semiconductor circuit densities require higher-quality ultra-pure water for cleaning wafers.
Minute DO (dissolved oxygen) in ultra-pure water oxygenates the wafer surfaces. To ensure high-quality ultra-pure water, DO levels must be strictly controlled. Horiba's SD-300 DO Monitor is the solution.
Created utilizing Horiba's semiconductor technologies, it provides effective high-quality, pure-water management. The SD-300 DO Monitor is lightweight and portable. It can be carried anywhere, enabling high-precision measurement of DO levels in ultra-pure water in the semiconductor industry.
Measure the ultra-low density of silica at the finest sensitivity of 0.01 µg/L (0.01 ppb).
The GD-Profiler 2™ provides fast, simultaneous analysis of all elements of interest including the gases nitrogen, oxygen, hydrogen and chlorine. It is an ideal tool for thin film characterization and process studies.
High spectral resolution analytical Raman microscope for ultimate performance and flexibility; includes UV Raman configuration, full automation and wide range of accessories.
Single point analysis and automated hyperspectral imaging.
Dual vacuum modes.
Spot sizes from 1.2 mm to 10 µm.
Redirecting to Chemical Concentration Monitors page
Gas Concentration Monitoring
Process Gas Monitoring
Thin Film Control/Analysis
Emission analysis type end-point monitor intended for end-point detection or plasma condition control in the plasma-based semiconductor thin-film process.
The ultimate solution to every challenge in thin film measurement
The LA-960 uses Mie Scattering (laser diffraction) to measure particle size of suspensions or dry powders. The speed and ease-of-use of this technique makes it the popular choice for most applications.