VCC-100

VCC-100

Vapor Concentration Controller

One of the gas delivery methods from liquid and solid is bubbling. Bubbling is widely used in the Chemical Vapor Deposition (CVD) process. By applying the NDIR technology and the valve technology HORIBA has been developed for long time, the VCC-100 can maintain a constant concentration at a downstream of a bubbler in order to meet industry requirements from the advanced process control era.

For more information view HORIBA's Chemical Concentration Control methods.

Segment: Semiconductor
Produktionsfirma: HORIBA STEC, Co., Ltd.

Easy to install

  • Just replace an existing pressure controller to VCC-100

 

Small footprint

  • Only 50 mm length in addition to pressure controller

 

Easy to use

  • Only to set target concentration
  • No connection to other components (e.g., MFCs) are necessary

 

2 modes of control

  • Concentration control: VCC-100 acts as concentration controller
  • Pressure control: VCC-100 acts as pressure controller with concentration output.
ModelVCC-110VCC-120
Cell Length5mm50mm
Target ChemicalsTMGa, DEZn, IPATMIn, TMIn, TEGa, TMGa, TMAI, DEZn, IPA
Target Flow Rate0.3 - 10 SLM
Operating Pressure30 - 300 kPa
Cell Temperature60 degree C
Fitting1/4 VCR male
CommunicationAnalogue / Digital, DeviceNet
Power Requirement

+/-15 v DC (Analogue/Digital)

24 v DC (DeviceNet)

Heater Power200 - 240 v AC
Dimensions155 x 59 x 140 mm

 

 

Vapor Concentration Control
Vapor Concentration Control
Vapor concentration control of precursors provide substantial improvement in stabilizing MOCVD processes. By measuring a precursor partial pressure in a downstream line with a Non Dispersive Infrared (NDIR) technology and controlling its total pressure, a precursor concentration can be kept constant. This precursor concentration control is validated as a practical method against a temperature fluctuation of a cylinder bath and a failure of reaching a saturation pressure in a cylinder.
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