Compound semiconductor wafer defect evaluation

PL spectrum and PL life can be obtained with one device, allowing multifaceted evaluation.

Obtain PL information for over 10,000 items in minutes. The peak wavelength distribution is expressed as a histogram.

Mixed (edge and screw) dislocations are observed in CL image 1, and edge dislocations are observed in CL image 6. In this way, defect types can be evaluated by displaying three-dimensional intensity images based on wavelength.

With time-resolved measurement, it is possible to read slight differences in luminescent components that cannot be read in a steady PL spectrum.

• Compound semiconductor wafer defect evaluation
  • Non-destructive wafer defect distribution evaluation using PL mapping
  • Full-surface high-speed defect evaluation of 3-inch InGaP wafers
  • GaN wafer defect classification evaluation
  • Analysis of the same area using steady PL spectra and time-resolved measurements
• Micro area crystal defect evaluation
  • High spatial resolution defect evaluation using TEPL
• Impurity analysis in compound semiconductor wafers
  • Impurity analysis in GaAs wafers by cathodoluminescence
• Browse all applications related to crystal defect analysis