Plasma Profiling ToFMS at International SIMS Conference

7. September 2015

Come and listen to the presentation that will be given at the 20th International Conference on Secondary Ion Mass Spectrometry (SIMS XX) in Seattle (September 13-18, 2015) on Monday 14, September at 11:20AM during the Microelectronics Session entitled “Combining Plasma Profiling ToFMS with ToF-SIMS depth profiling for microelectronic applications” Co-authored by A. Tempez, J.-P. Barnes, Emmanuel Nolot, S. Legendre

Results from a collaborative work between CEA-Leti and Horiba Scientific will be presented. Depth profiling data from ToF-SIMS and plasma profiling TOFMS will be shown for materials used in microelectronics and nanotechnology such as magnetic layers for 3D sensors, Pt-doped Ni-silicides for advanced contacts, PZT… These examples will illustrate the advantages of PP-TOFMS of being much less matrix dependent than SIMS due to the fact that sputtering and ionization are separated processes in PP-TOFMS analysis. Both techniques will be compared in terms of sensitivity, depth resolution, and contamination identification and quantification.