Plasma Profiling TOFMS


Ultra-Fast, Sensitive and High Resolution Depth Profiling technique

The new Plasma Profiling TOFMS addresses the needs of materials scientists across a wide range of application areas. PP-TOFMS provides fast elemental depth distribution of almost any material. The speed and ease of use of PP-TOFMS aims at reducing the optimization time of growth processes as many research scientists strive to reduce the time from discovery to applications of new materials.

The simultaneous full coverage of TOFMS available for each point of depth permits the detection of non suspected contamination. This is key for failure analysis and optimization of thin film processes that tend to no longer be based on ultra-high grade methods (i.e. ink jet printing…).

PP-TOFMS will be the ideal close-to-process tool for materials scientists:

  • To check on stoichiometry versus depth of layers ranging from nm to tens of microns
  • To determine doping depth distribution
  • Identify unsuspected contamination
  • Monitor interface composition and width


PP-TOFMS instrument is

  • Compact
  • Rapid
  • Easy to get hands on
  • General application in materials science
  • Multi-user

Hergestellt von HORIBA


  • Glow discharge Plasma Source
  • Unique patented RF pulsing mode
  • No sample preparation, no sample transfer in UHV environment
  • Easy (flat Horizontal) and ergonomic sample positioning with laser help
  • High sample tolerance size from 0.7 cm to 30 cm
  • Standard 4 mm anode for 4 mm diameter crater
  • Available 2mm anode for 2 mm diameter crater
  • Oil free environment (Dry pump)
  • Easy removal and cleaning of source parts

TOF analyzer

  • Orthogonal extraction
  • High resolution reflectron (resolving power up to 5000 at 208 Th)
  • User friendly, ergonomic, fast hands on
  • Possibility to attenuate for four intense ions for high dynamics: user choice of ions and attenuation amplitude


  • Fast automatic starting procedures
  • Real time display of depth profiles
  • One click semi-quantitative depth profile
  • Remote online capability


Technical Details

  • Nanometer Depth Resolution
  • Dynamic range (with blanking) of 108
  • 13.56 MHz RF pulse generator
  • Large sample stage accepting sample as big as 30 cm
  • Horizontal sample positioning with laser centering
  • 2 and 4 mm diameter anode available
  • High Resolution orthogonal Time of Flight Mass Spectrometer (two modes 3500 (high sensitivity) or 5000 (high resolution) at m/z 208)
  • Mass accuracy 40 μTh.Th-1
  • Ultra Fast acquisition rate (33 kHz to cover all elements up to U)
  • Interface including flexible attenuating filter (up to 4 ions)
  • Side Panel display for vacuum status
  • Ultra Fast Sputtering Mode of polymeric layers
  • Compact instrument WxDxH 140 × 90 × 110 mm, weight 345 kg
  • Pre-requisites:

    • Ultra pure 6N purity Argon gas
    • N2, Compressed air