Ferroelectric Thin Films Characterization by Spectroscopic Ellipsometry PbZr1-xTixO3 & Ba1-xSrxTiO3

BST thin film deposited onto polished sapphire substrates using Pulsed Laser Deposition (PLD)

This spectrum on the Figure shows numerous interference fringes. The smallest period corresponds to the anisotropic behaviour of the sapphire additional to the backside reflection while the greater period is due to the BST coating.

Ferrolectric thin films have attracted much attention for potential applications such as high dielectric constant capacitors, infrared detectors, piezoelectric transducers, optical modulators, optical waveguides, nonvolatile memory chips and capacitors for dynamic random access memory (DRAM). Their ferroelectric and dielectric properties have been extensively investigated, while their optical properties have been relatively rarely studied.

However, the optical constants, e.g., refractive index and extinction coefficient have great importance for waveguiding and other optical applications. The Phase Modulated Spectroscopic Ellipsometer (PMSE) has been used to determine the optical constants of PZT and BST materials.

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Ferroelectric Thin Films Characterization by Spectroscopic Ellipsometry PbZr1-xTixO3 & Ba1-xSrxTiO3
DescriptionSpectroscopic ellipsometry is a powerful technique to characterize the thickness and optical constants of complex ferroelectric stacks with high accuracy and precision. Specific modelling features in this study include the characterization of the anisotropic sapphire substrate, rough overlayer and layer inhomogeneity with depth.
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