Defect Evaluation of GaN Epitaxial Wafer by CL

The defect density can be evaluated from the intensity image obtained by CL measurement.

CL intensity image at a magnification of 45,000

The threading dislocation occurs easily in GaN crystal grown on sapphire substrates. It is said that this is caused by the large lattice mismatch of sapphire and GaN.

The crystal may seem to be uniform in the SEM image, but the dark spot such as the threading dislocation can be observed when measuring the CL intensity image at the wavelength (362nm) which corresponds to the band edge emission.

The defect density such as the threading dislocation can be evaluated from the intensity image obtained by CL measurement.

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Defect Evaluation of GaN Epitaxial Wafer by CL
DescriptionThe threading dislocation occurs easily in GaN crystal grown on sapphire substrates. The crystal may seem to be uniform in the SEM image, but the dark spot such as the threading dislocation can be observed when measuring the CL intensity image at the wavelength (362nm) which corresponds to the band edge emission.
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