UVISEL 2

UVISEL 2-HORIBA

Spectroscopic Ellipsometer

The ultimate solution to every challenge in thin film measurement.

Segment: Scientific
Division: Surface Characterization
Manufacturing Company: HORIBA France SAS

HORIBA Scientific has invented the new generation of scientific spectroscopic ellipsometer that delivers the highest level of performance for nano and micro layer characterization.

The UVISEL 2 includes the widest range of integrated automated features useful for the investigation of all material family.

The UVISEL 2 features a patented sample vision coupled with automated spot selection for accurate positioning of the measurement spot and region on the sample.

The UVISEL 2 integrates the world’s smallest patented achromatic spot size of 35μm capable of covering a large spectral range from FUV to NIR for measurement of very small sample areas.

Driven by the DeltaPsi2 software, the UVISEL 2 is simple to operate and has the performance required characterizing all current materials as well as the next generation materials and structures.

HORIBA Scientific started with what has proven to be the most accurate and sensitive ellipsometer, the UVISEL, and redesigned and improved everything to deliver an instrument with a remarkably higher specification than any other instrument.

  • Scanning Spectroscopic Phase Modulated Ellipsometer:190-880nm
  • Vision system providing a real-time colour image of the sample and exact measurement spot using the ellipsometer head.

  • Computer controlled Microspots
    • Choice of 8 different spot sizes to suit the feature size of sample.
    • Achromatic microspot optics down to 35 µm
  • Computer controlled variable angle goniometer
    • Angle range 35° - 90°
    • Allows Variable Angle Spectroscopic Ellipsometry
  • Computer controlled 200mm x 200mm XYZ Stage
    • For automated sample mapping
    • 200mm square sample holder with 2 reference samples attached
    • Automatic Z-height adjustment : 40mm with Autofocus
  • Motorised Sample Tilt Alignment
    • Alignment of the sample by laser system
  • 150 W Xenon light source
  • Double Monochromator System for UV-Vis Range
    • 190nm – 880nm (stray light rejection < 0.5% at 190nm)
    • Twin PMT detectors for highest sensitivity and dynamic range

NIR Extension up to 2100 nm

  • Monochromator for NIR Range
    • 880nm – 2100nm.
    • InGaAs detector
  • Computer and Delta Psi2 Software package
    • Acquisition, Calibration and Data interpretation
    • Automatic Calibration
Characterization of DNA sensor pads using UVISEL Spectroscopic phase modulated Ellipsometer
Characterization of DNA sensor pads using UVISEL Spectroscopic phase modulated Ellipsometer
Spectroscopic Ellipsometric measurements on biochip structures in a liquid flow cell environment
Spectroscopic Ellipsometric measurements on biochip structures in a liquid flow cell environment
Characterization of TFT and LTPS TFT-LCD Display Panels by Spectroscopic Ellipsometry
Characterization of TFT and LTPS TFT-LCD Display Panels by Spectroscopic Ellipsometry
Spectroscopic ellipsometry is an excellent technique for the highly accurate characterization of TFT-LCD display panels based on a-Si and LTPS technologies. Owing to the sensitivity of the UVISEL spectroscopic ellipsometer and the advanced modeling features included in the DeltaPsi2 software it is possible to detect in a multistack different a-Si layers processed by various methods. Moreover the spectroscopic ellipsometry measurements allow determination of the grain size of p-Si films and illustrate the ability to characterize the crystallinity of silicon with high accuracy.
Encapsulated Organic Light Emitting Diode Devices Characterization by Spectroscopic Ellipsometry
Encapsulated Organic Light Emitting Diode Devices Characterization by Spectroscopic Ellipsometry
In this Application Note Spectroscopic Ellipsometry, a standard optical characterization technique used to measure multi-layered thicknesses and optical constants (n,k), has been successfully used to characterize encapsulated OLED devices. This report also investigates the aging process of OLED. Spectroscopic ellipsometry is a powerful technique to characterize the thickness and optical constants of encapsulated OLED devices. For the case of non-transparent encapsulation the combination of ellipsometric measurements via the glass substrate and the powerful modelling features of DeltaPsi2 software make it possible to analyze “this reverse sample”.
OLED – Organic Light Emitting Diodes
OLED – Organic Light Emitting Diodes
Phase Modulated Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of complete OLED stacks. The technique allows the determination of film thickness, optical properties and the effect of dopants to the active layers. For very high throughput applications where large area flat panels are to be characterized in a production environment the Jobin Yvon FF-1000 ellipsometer has a fully automated sample stage able to accept samples up to 1000 mm x 1000 mm. This accurate, automated thin film metrology tool delivers both unique performance and proven reliability for on-line quality control of production processes.
Optical Characterization of Organic Semiconductors by Spectroscopic Ellipsometry
Optical Characterization of Organic Semiconductors by Spectroscopic Ellipsometry
Spectroscopic Ellipsometers are optical thin film measurement tools for determining film thickness and optical constants (n,k) of thin film structures. They are widely used in the microelectronics, display, photonics, photovoltaics, lighting, optical and functional coating, biotechnology industries. When compared with other optical metrology instruments the unique strength of spectroscopic ellipsometers are based on their highly precise and simple experimental measurements plus physical and material information derived from optical constants characterization.
Plasma Display Panel Characterization Using Spectroscopic Ellipsometry
Plasma Display Panel Characterization Using Spectroscopic Ellipsometry
For multilayer structures it is always helpful and often necessary to know the properties of each film. Using the Jobin Yvon UNISEL NIR it is a straightforward procedure to investigate the thickness and optical properties of the complete PDP structure. To ensure high yields in quality and quantity the FF-1000 ellipsometer is dedicated to the flat panel industries with a fully automated large area sample stage able to accept samples up to 1000 mm x 1000 mm. This accurate, automated thin film metrology tool delivers both unique performance and proven reliability for online quality control of production processes.
TFT-LCD Display Characterization Using Spectroscopic Ellipsometry
TFT-LCD Display Characterization Using Spectroscopic Ellipsometry
Phase Modulated Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of complete TFT-LCD device. The technique allows the determination of film thickness, optical properties but also more complex properties such as graded or anisotropic layers and effect of dopants. In the flat panel industry the pressure to reduce manufacturing coasts is and reliable metrology tools are required to control the different steps of the process. Spectroscopic ellipsometry is a non-destructive technique which presents advanced capabilities and proven reliability tailored for qualification and on-line production control.
Ellipsometric Characterization and Modeling of Different Types of Nanoparticles
Ellipsometric Characterization and Modeling of Different Types of Nanoparticles
UVISEL ellipsometers have been used for the characterization of several systems of nanoparticles. This ellipsometric characterization involves the development of specific modeling tools available within DeltaPsi2 software. Through this report we illustrate the application of ellipsometry to the characterization of nanoparticle based samples. Our goal is to demonstrate that the technique can apply within a large panel of materials science. The HORIBA ellipsometric product line offers the most versatile hardware of the UVISEL series combined with the DeltaPsi2 software including unique modeling features to get the most of your applied work on this fascinating domain of modern physics.
An Ellipsometric Study of the Optical Constants of C60 & C70 Thin Films
An Ellipsometric Study of the Optical Constants of C60 & C70 Thin Films
Spectroscopic ellipsometry (SE) is used to determine the optical constants of C60 and C70 thin films over the range 0.6-6.5eV (i.e. 190-2100nm). The information provided by the optical constants allows for a better understanding of the electronic structure of these materials.
Ellipsometric Characterization of Doped and Undoped Crystalline Diamond Structures
Ellipsometric Characterization of Doped and Undoped Crystalline Diamond Structures
In this work, spectroscopic ellipsometry (SE) was successfully applied to characterize the optical properties and the thicknesses of doped and undoped diamond layers. The sensitivity of this technique enables the doped layer to be distinguished from the undoped one in a sample consisting of a stack of these two layers. Moreover, an interface between the two layers has been detected. This work and others reported previously show clearly that ellipsometry is the technique of choice for the characterization of optical and structural properties of layered materials thanks to its sensitivity and the wide range of information it provides.
Ellipsometric Characterization of Doped and Undoped Crystalline Diamond Structures
Ellipsometric Characterization of Doped and Undoped Crystalline Diamond Structures
In this work, spectroscopic ellipsometry (SE) was successfully applied to characterize the optical properties and the thicknesses of doped and undoped diamond layers. The sensitivity of this technique enables the doped layer to be distinguished from the undoped one in a sample consisting of a stack of these two layers. Moreover, an interface between the two layers has been detected. This work and others reported previously show clearly that ellipsometry is the technique of choice for the characterization of optical and structural properties of layered materials thanks to its sensitivity and the wide range of information it provides.
Thickness and Optical Constants of Amorphous Carbon Coatings Measured by Spectroscopic Ellipsometry
Thickness and Optical Constants of Amorphous Carbon Coatings Measured by Spectroscopic Ellipsometry
The UVISEL Spectroscopic Ellipsometer is the ideal tool for reliable film thickness and optical constants characterization of amorphous carbon coatings, even in difficult cases where the film thickness is very thin. Roughness, and interface "adhesion" can also been determined.
Characterization of GeSbTe films by Spectroscopic Ellipsometry for Rewritable Optical Discs
Characterization of GeSbTe films by Spectroscopic Ellipsometry for Rewritable Optical Discs
Spectroscopic ellipsometry is a powerful technique for high accuracy characterization of the thickness and optical constants of GeSbTe multilayer system for rewritable optical disc applications. It was shown that measurement in the NIR range gives better accuracy for the analysis of these types of material. The use of the multiple sample analysis reduces parameter correlations and errors for the thinnest layers. Owing to the advanced modeling features included in the DeltaPsi2 software, it is a straightforward procedure to analyze such structures even with layers deposited on both sides of the substrate.
Ferroelectric Thin Films Characterization by Spectroscopic Ellipsometry PbZr1-xTixO3 & Ba1-xSrxTiO3
Ferroelectric Thin Films Characterization by Spectroscopic Ellipsometry PbZr1-xTixO3 & Ba1-xSrxTiO3
Spectroscopic ellipsometry is a powerful technique to characterize the thickness and optical constants of complex ferroelectric stacks with high accuracy and precision. Specific modelling features in this study include the characterization of the anisotropic sapphire substrate, rough overlayer and layer inhomogeneity with depth.
Determination of Perovskite Optical Constants
Determination of Perovskite Optical Constants
Hybrid organic-inorganic perovskite materials have emerged over the past five years as promising absorber layers for new high-efficiency and low-cost solar cells that combine the advantages of organic and inorganic semiconductors. The increasing interest in this technology is pushing research laboratories to find the optimal techniques for the accurate characterization of opto-electronic properties of these materials.

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