HORIBA provide a comprehensive range of analytical measurements for the semiconductor industry.
These measurements include:
- Mechanical stress introduced both intentionally (epitaxial layers) and unintentionally (around microstructures) using Raman spectroscopy
- Carrier lifetimes from photoluminescence lifetime measurements
- Film thickness, quality and composition using spectroscopic ellipsometry and glow discharge spectroscopy
- Metal plating thickness characterisation by x-ray fluorescence imaging
- CMP slurry particle size measurement using both laser and dynamic light scattering
- Defect analysis using both cathodoluminescence and photoluminescence (PL) mapping with sub-micron resolution
- Whole wafer PL mapping also provides critical information for the analysis compound semiconductor wafer processing steps.
For cutting edge 2D materials research tip enhanced Raman and photoluminescence (TERS, TEPL) provides information on crystallinity, defects and topography with 10nm spatial resolution.