Micro area crystal defect evaluation

It is possible to analyze the crystallinity, number of layers, etc. of minute regions of two-dimensional materials, which are next-generation semiconductor materials.

• Compound semiconductor wafer defect evaluation
  • Non-destructive wafer defect distribution evaluation using PL mapping
  • Full-surface high-speed defect evaluation of 3-inch InGaP wafers
  • GaN wafer defect classification evaluation
  • Analysis of the same area using steady PL spectra and time-resolved measurements
• Micro area crystal defect evaluation
  • High spatial resolution defect evaluation using TEPL
• Impurity analysis in compound semiconductor wafers
  • Impurity analysis in GaAs wafers by cathodoluminescence
• Browse all applications related to crystal defect analysis