Semiconductors

Stress analysis of SiGe

High spatial resolution stress analysis using AFM Raman

It was found that stress is concentrated in areas where the Si band strength is strong (= thick film).

When the spectrum at tip-in was peak-separated, a peak shifted from the Si peak (520.48cm-1) was detected, indicating the presence of stress (strain).

When Tip out, the influence of bulk Si is strong, and when Tip in, only the signal near the outermost surface can be obtained.

Microscopic Raman spectrometer LabRAM Odyssey

Industry's highest level* stress resolution (*according to our research in 2022)
Capable of mapping up to 12 inch wafers
Temperature control holder can be used (please consult us separately regarding sample size)

AFM (atomic force microscope) Raman XploRA Nano

Acquire physical information by AFM and chemical information by Raman simultaneously
Stress distribution analysis on the outermost surface on the order of nm is possible.