Semiconductors

Impurity analysis in compound semiconductor wafers

Impurity analysis in GaAs wafers by cathodoluminescence

We analyzed the spectrum of GaAs wafers using cathodoluminescence (CL) and confirmed the peaks of each level that contribute to light emission. As a result of acquiring CL images for each peak, we were able to confirm that carbon and copper were scattered.

Cathodoluminescence measurement system HORIBA CLUE series

Can be added to existing electron microscopes
Compatible with measurements at ultraviolet to near-infrared wavelengths (200 to 2,100 nm)
SEM integrated high range CL imaging device (Imaging CL) can also be proposed.

Cathodoluminescence - CLUE Series

Cathodoluminescence Solutions for Electron Microscopy

F-CLUE

Compact Hyperspectral Cathodoluminescence

H-CLUE

Versatile Hyperspectral Cathodoluminescence

R-CLUE

Raman Photoluminescence & Cathodoluminescence

AFM (atomic force microscope) Raman XploRA Nano

Acquire physical information by AFM and chemical information by Raman simultaneously
Stress distribution analysis on the outermost surface on the order of nm is possible.

XploRA Nano

AFM-Raman for Physical and Chemical imaging

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