Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface. A common type of dry etching is reactive-ion etching. Unlike with many (but not all, see isotropic etching) of the wet chemical etchants used in wet etching, the dry etching process typically etches directionally or anisotropically.
Pressure Insensitive Mass Flow Module
Ultra-thin Mass Flow Controller
Optical Emission Spectroscopy Etching End-point Monitor
Endpoint / Chamber Health Monitor based on Optical Emission Spectroscopy and MWL Interferometry
Thermal Flow Splitter
Wafer Back Side Cooling System
High-Accuracy Infrared Thermometers [Stationary type]
Camera Endpoint Monitor based on Real Time Laser Interferometry
Compact Process Gas Monitor
New concept Pressure Insensitive Mass Flow Controller
Multi Range/Multi Gas Digital Mass Flow Controller
Pressure Insensitive Mass Flow Controller
Direct Liquid Injection System
Capacitance Manometer
Digital Liquid Mass Flow Meters
AFM-Raman for Physical and Chemical imaging
Raman Spectrometer - Confocal Raman Microscope
Spectroscopic Ellipsometer for Simple Thin Film Measurement
X-ray Analytical Microscope (Micro-XRF)
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