HORIBA provide a comprehensive range of analytical measurements for the semiconductor industry.
These measurements include:
- Mechanical stress introduced both intentionally (epitaxial layers) and unintentionally (around microstructures) using Raman spectroscopy
- Carrier lifetimes from photoluminescence lifetime measurements
- Film thickness, quality and composition using spectroscopic ellipsometry and glow discharge spectroscopy
- Metal plating thickness characterisation by x-ray fluorescence imaging
- CMP slurry particle size measurement using both laser and dynamic light scattering
- Defect analysis using both cathodoluminescence and photoluminescence (PL) mapping with sub-micron resolution
- Whole wafer PL mapping also provides critical information for the analysis compound semiconductor wafer processing steps.
- XGT-9000SL can analyze large 12-inch wafers as shown in the video below.
the video "XGT-9000SL"
For cutting edge 2D materials research tip enhanced Raman and photoluminescence (TERS, TEPL) provides information on crystallinity, defects and topography with 10nm spatial resolution.
