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CMP

Chemical mechanical polishing (CMP) is a powerful fabrication technique that uses chemical oxidation and mechanical abrasion to remove material and achieve very high levels of planarity.

Chemical mechanical planarization has been widely applied to selectively remove materials for topography planarization and device structure formation in semiconductor manufacturing. The selective material removal is achieved by using chemical reaction and mechanical abrasion with slurries containing unique chemical formulations and large numbers of abrasive particles. During polishing, chemical reaction products and mechanical wear debris are generated. Slurry particles and polishing byproducts are pressed onto wafer surface. During wafer transferring from polisher to cleaner, contaminants are adhered onto wafer surface. Post-CMP cleaning is required to remove particles, organic residues, and metallic contaminants from wafers with different surface, chemical, and mechanical properties in various geometric features, without generating scratches, water marks, surface roughness, corrosion, and dielectric constant shift.

Particle Size

more Partica mini LA-350

Laser Scattering Particle Size Distribution Analyzer

more ViewSizer 3000

Multi-Laser Nanoparticle Tracking Analysis (NTA)

more Partica LA-960V2

Laser Scattering Particle Size Distribution Analyzer

Surface Analysis

more SmartSPM

Advanced stand-alone AFM

Process Monitoring

more MacroRAM™

Affordable Benchtop Raman Spectrometer

Thin Film Quality & Thickness

Zeta Potential

Gas Concentration

more IR-300

Vapor Concentration Monitor

pH Monitoring

more UP-100

Micro Volume pH Monitor

Chemical Concentration Monitors

more CS-600F

Fiber Optic Type Chemical Concentration Monitor

more CS-900

Non-Contact Chemical Concentration Monitor

more HF-960EM

In-line Sensor & Auto Range Switching Concentration Monitor

more HF-960M

Low Concentration Type HF/HCl/NH3 Concentration Monitor

more HP-480(W)

Industrial pH meter

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