Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface. A common type of dry etching is reactive-ion etching. Unlike with many (but not all, see isotropic etching) of the wet chemical etchants used in wet etching, the dry etching process typically etches directionally or anisotropically.
High Speed & Precision Pressure Insensitive Mass Flow Module
Wide Range Pressure Insensitive Mass Flow Module
Pressure Insensitive Mass Flow Module
Ultra-thin Mass Flow Controller
Thermal Flow Splitter
New concept Pressure Insensitive Mass Flow Module
Digital Liquid Mass Flow Meters
Quadrupole Mass Analyzer
Capacitance Manometer
X선 분석 현미경 초대형 챔버 모델
Optical Emission Spectroscopy Etching End-point Monitor
Camera Endpoint Monitor based on Real Time Laser Interferometry
Miniature Multi Communication UV-NIR Spectrometer
UV-VIS-NIR Spectrometer
Multispectra, Multifiber, Multichannel Imaging spectrometer with 8-16-32 Simultaneous UV-NIR Spectra
Most Compact Vacuum UV Back-Illuminated CCD Spectrometer (VUV-FUV)
Plasma Emission Controller
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