Analysis of O2, NO and CO Reaction Processes on Silicon Surfaces by Means of Surface Differential Reflectance Spectroscopy and Reflectance Difference Spectroscopy

By: Shinya Ohno

31 August 2011


We developed a new apparatus by combining surface differential reflectance (SDR) spectroscopy and reflectance difference spectroscopy (RDS), which enables us to observe thickness at submonolayer regime and interface strain at the atomic level in nondestructive manner with high surface sensitivity. We applied this new technique to observe initial oxidation process on silicon surfaces in real-time, and could obtain novel information on the growth modes and activation energies. We further investigated ingredients of exhaust gas, such as carbon monoxide (CO) and nitric oxide (NO).

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