January 2018

HORIBA will be involved in the Hymet project mainly with two characterization techniques: PP-TOFMS and Tip-Enhanced Raman Spectroscopy (TERS).


Hymet project goal is to develop a European hybrid metrology capability for the characterisation of thin film performance and durability in energy applications. This will include the development of new methods to enable datasets from multiple measurements to be combined. These new capabilities will aid deployment in novel energy applications. 

March 2016

Combining plasma profiling TOFMS with TOF-SIMS depth profiling for microelectronic applications

Read our recent article showing the comparison of TOF-SIMS and Plasma Profiling TOFMS (PP-TOFMS) depth profiles of SiGe, metal silicides,  photovoltaics complex metal/oxide stacks, and PZT, published in Journal of Vacuum Science & Technology B.

And discover the unique capabilities of PP-TOFMS as a fast depth profiling tool providing reference free semi-quantification and spontaneous detection of unexpected contaminants.

This article has been written in collaboration with CEA Leti, Grenoble, France.

September 2015

New article from our collaboration with University of Manchester:
I.S. Molchan, G.E. Thompson, J. Walton, P. Skeldon, A. Tempez, S. Legendre, Passivation behaviour of 304 stainless steel in an ionic liquid with a fluorinated anion, Applied Surface Science, in press, published online, doi:10.1016/j.apsusc.2015.08.189

In this work, plasma profiling time-of-flight mass spectrometry is successfully employed for looking at the effect of immersion of type 304 stainless steel in pyrrolidium-2-one trifluoroacetate ionic liquid on surface composition. A reference free semi-quantification results in high resolution elemental depth profiles.

Read more

September 2015

Come and listen to the presentation that will be given at the 20th International Conference on Secondary Ion Mass Spectrometry (SIMS XX) in Seattle (September 13-18, 2015).

Read more

July 2015

Watch our new video on plasma profiling TOFMS and learn more about this ultra-fast and user-friendly depth profiling technique. PP-TOFMS will save you time in the optimization of layer deposition process and fabrication method.

April 2015

New publication: Collaboration with University of Ghent:
L Van Puyvelde, J Lauwaert, A Tempez, W Devulder, S Nishiwaki, F Pianezzi, C Detavernier, A N Tiwari and H Vrielinck, Electronic defect study on low temperature processed Cu(In,Ga)Se2 thin-film solar cells and the influence of an Sb layer, J. Phys. D: Appl. Phys. 48, 175104 (2015). doi:10.1088/0022-3727/48/17/175104

In this work, plasma profiling TOFMS is used to characterize CIGS thin films on glass for Photovoltaics applications and to study Sb diffusion.

January 7, 2015 in Cardiff, UK

UKSAF meeting

November 2014

An oral presentation entitled “PECVD Boron-doped Oxides as Diffusion Sources Investigations of Diffusion Processes, and Integration in Silicon Solar Cell Concepts” at the 6th World conference on Photovoltaics Energy Conversion has been given by Mrs. Nadine Wehmeier from the Institute of Solar Energy Research Hameln (ISFH), Germany.

September 2014

The first commercial Plasma Profiling-TOFMS has been successfully installed at the laboratory of Analytical Spectrometry of Profs Alfredo Sanz Medel and Rosario Pereiro at the University of Oviedo!!
The instrument coupling a glow discharge source to a time of flight mass spectrometer (GD-TOFMS) is capable of bulk and depth profile analysis of thin and thick films with nanometer depth resolution. Compared to GD-OES, it offers higher sensitivity and provides isotopic and molecular depth profiling as well as detection of unexpected elements (e.g. contaminants). It is also of ideally suited for rare earth elemental analysis.

You may contact the product manager, Agnès Tempez at agnes.tempez@horiba.com for more information. For analysis service do not hesitate to contact Prof Rosario Pereiro at mrpereiro@uniovi.es.