
Raman Spectroscopy
Nano-indented Silicon

- System: LabRAM HR Evolution
- Time per point: 400 ms
- Step size: 100 nm
- Data points: 2,450
Peak position image of Silicon after nano-indentation with a Berkovich indentor. The lattice strain is clearly visible around the indentation, causing a significant shift in the first order Silicon phonon, typically positioned at 520.7 cm-1 for a strain-free crystalline lattice.