Thin Film Measurement

Production processes are evolving rapidly which is reflected in a growing need for high-grade evaluation and analysis of a wide range of thin films and complex multilayer structures. HORIBA systems are capable of measuring film properties including stress, thickness and optical constants of complex and multilayer films and ultra-thin SiO2 films.

 

Optical Emission Spectroscopy Etching End-point Monitor EV-140C

Emission analysis type end-point monitor intended for end-point detection or plasma condition control in the plasma-based semiconductor thin-film process.

Real Time Interferometric Process Monitor DIGILEM-CPM-Xe/Halogen

Real Time Interferometric Process Monitor provides high precision detection of film thickness and trench depth during the etching/coating process.Interference occurs when monochromatic light hits the sample surface, resulting in...

Real Time Interferometric Process Monitor LEM-CT-670-G50

Real Time Interferometric Process Monitor provides high precision detection of film thickness and trench depth during the etching/coating process.