Thin Film Control/Analysis
Quickly evaluate and analyze various film characteristics, including thickness, composition, and degree of crystallization, to improve cell quality management and yield.
HORIBA’s products support the formation of ideal films for solar cells, by measuring the thickness and degree of crystallization in each film layer, and selecting the optimum deposition conditions. This enables effective cell quality management, and promotes more stable conversion efficiency. The FF-2000 Series is suitable for non-destructive analysis of full-sized substrates.
Real Time Interferometric Process Monitor provides high precision detection of film thickness and trench depth during the etching/coating process.Interference occurs when monochromatic light hits the sample surface, resulting in...
Real Time Interferometric Process Monitor provides high precision detection of film thickness and trench depth during the etching/coating process.Interference occurs when monochromatic light hits the sample surface, resulting in...
This is an emission analysis type end-point monitor intended for end-point detection or plasma condition control in the plasma-based semiconductor thin-film process. The newly-developed Rapture Intensity algorithm allows accurate...
Products: UVISEL VIS: 210-880 nm | UVISEL FUV: 190-880 nm | UVISEL NIR: 245-2100 nm | UVISEL ER: 190-2100 nm | UVISEL VUV: 142-880 nm
Measure thin film thickness and optical constants. For research and process development.
Visualize your sample and measure thin film thickness and optical constants in seconds.
"With Auto SE, routine work will never be the same!"
NEW NIR Extended Spectral Range !
The GD-Profiler 2™ provides fast, simultaneous analysis of all elements of interest including the gases nitrogen, oxygen, hydrogen and chlorine. It is an ideal tool for thin film characterization and process studies.