Gallium Nitride (GaN) nanowires mapping
Photoluminescence (or PL) and Raman are spectroscopy techniques providing information on optical and electrical properties of semiconductors and many nano-materials.
A Raman / PL microscope is a laser based instrument able to map nanostructures down to 250nm spatial resolution, but since it is a spectroscopy technique, it is also able to observe features that are much smaller, based on the chemical signature. Carbon Nanotubes are a very common example of such nanostructures of nanometer or sub-nanometer size that can be observed.
HORIBA Scientific mapping systems such as the LabRAM HR or LabRAM ARAMIS are used to image these small features
Raman and Photoluminescence Mapping systems from HORIBA Scientific are used for research or production environments, and can be fitted with temperature controlled cells (LN2 or He cryostats) to measure photoluminescence emission at low temperature.
Source: Polarized Raman Confocal Microscopy of Single Gallium Nitride Nanowires Peter J. Pauzauskie, David Talaga, Kwanyong Seo, Peidong Yang, and Francois Lagugne-Labarthet. JACS 2005, 147(49), 17146
Silicon (Si) nanowire mapping
This work is related to the following instruments and applications:
- Micro-PL, photoluminescence at the sub-micron scale
- Full Wafer mapping, PL Mapper System
- Photoluminescence studies of Carbon Nanotubes
- Photoluminescence and Raman of III-V devices such as AlGaAs / InGaAs diodes
- Raman and Photoluminescence studies of semiconductors
- Low Temperature Photoluminescence (PL)
- Combined AFM and Raman / Nano-Raman system