Gallium Nitride (GaN) nanowires mapping

Nanostructures Mapping

Photoluminescence (or PL) and Raman are spectroscopy techniques providing information on optical and electrical properties of semiconductors and many nano-materials.

A Raman / PL microscope is a laser based instrument able to map nanostructures down to 250nm spatial resolution, but since it is a spectroscopy technique, it is also able to observe features that are much smaller, based on the chemical signature. Carbon Nanotubes are a very common example of such nanostructures of nanometer or sub-nanometer size that can be observed.

GaN Nanowire Raman
Pictures. Top: Gallium Nitride (GaN) nanowire AFM image. Left: Gallium Nitride (GaN) nanowire Raman polarization images. The nanowire is 150nm in diameter.

HORIBA Scientific mapping systems such as the LabRAM HR or LabRAM ARAMIS are used to image these small features

Raman and Photoluminescence Mapping systems from HORIBA Scientific are used for research or production environments, and can be fitted with temperature controlled cells (LN2 or He cryostats) to measure photoluminescence emission at low temperature.

Source: Polarized Raman Confocal Microscopy of Single Gallium Nitride Nanowires Peter J. Pauzauskie, David Talaga, Kwanyong Seo, Peidong Yang, and Francois Lagugne-Labarthet. JACS 2005, 147(49), 17146

Silicon (Si) nanowire mapping

Silicon (Si) nanowire mapping
Picture: Silicon (Si) nanowire Raman image . The nanowire is about 200nm in diameter.

Raman spectroscopy and Photoluminescence are great tools to determine crystallinity, crystallographic orientation of nano-structures.