Semiconductor Page Heading

Surface Analysis

Surface analysis equipment using HORIBA's spectroscopic technology realizes highly accurate surface analysis that can be achieved by its precise spectroscopic analysis.

GD-OES (Glow Discharge Optical Emission Spectroscopy) is an analysis method for rapid depth profile analysis of samples that have undergone various surface treatments such as plating, heat treatment, vapor deposition, and sputtering. This is an effective analysis method for evaluating multi-layered films of compound semiconductors.

Raman spectroscopy is used to evaluate crystallinity and stress in the field of semiconductors. Raman spectra can be acquired with high resolution, and subtle differences can be discerned.

GD-Profiler 2™辉光放电光谱仪
GD-Profiler 2™辉光放电光谱仪

用辉光放电光谱仪去发现一个崭新的信息世界

SmartSPM
SmartSPM

先进原子力显微镜

留言咨询

如您有任何疑问,请在此留下详细需求信息,我们将竭诚为您服务。

* 这些字段为必填项。

Corporate