UVISEL Plus

UVISEL PLUS-HORIBA

Ellipsomètre spectroscopique du FUV au NIR: 190 à 2100 nm

L'ellipsomètre de référence pour la mesure des couches minces

L'ellipsomètre UVISEL Plus offre la meilleure combinaison de modularité et de performances pour la caractérisation avancée des couches minces, des surfaces et des interfaces.

Basé sur la technologie de modulation de phase, l'ellipsomètre UVISEL Plus offre une conception optique performante qui couvre en continu la gamme spectrale de 190 à 2100 nm. Il fournit des données de haute qualité sur toute la gamme spectrale, avec une grande précision, des mesures à haute résolution et un excellent rapport signal/bruit.

La technologie de modulation de phase se caractérise par des changements de polarisation à haute fréquence (50 kHz), sans aucun mouvement mécanique. Elle permet d'obtenir :

  • Des mesures très précises pour toutes les valeurs de (Ψ,Δ)
  • Un excellent rapport signal/bruit du FUV au NIR
  • Une vitesse d'acquisition des données très rapide, pouvant atteindre 50 ms/point, idéale pour les études cinétiques et les mesures in situ en temps réel
     

L'ellipsomètre à modulation de phase UVISEL Plus offre une sensibilité et une précision supérieures pour la caractérisation des couches minces par rapport aux ellipsomètres conventionnels utilisant des éléments rotatifs. Il permet de détecter des couches ou des interfaces très minces que nul autre ellipsomètre ne peut voir, ainsi que de caractériser des couches épaisses pouvant atteindre 50 µm. La mesure et la caractérisation d'échantillons transparents avec réflexions arrière sont simples et précises et ne nécessitent pas de grattage de la face arrière.

Conçu pour offrir une flexibilité accrue dans les mesures de couches minces, l'UVISEL Plus propose des microspots pour les échantillons structurés, un angle variable, une platine de cartographie automatique et une gamme d'accessoires, ce qui le rend évolutif pour répondre à tous vos besoins en matière d'applications et de budget.
La conception modulaire de l'UVISEL Plus permet de l'utiliser soit comme outil de métrologie de paillasse, soit pour une intégration in situ dans des chambres de traitement ou des machines roll-to-roll.

L'UVISEL Plus est contrôlé soit par la plateforme logicielle DeltaPsi2, soit par l'interface Auto-Soft, communes à tous les ellipsomètres HORIBA. DeltaPsi2 fournit un ensemble complet pour la mesure et la modélisation permettant de traiter à la fois les applications courantes et avancées des couches minces, tandis que l'interface Auto-Soft offre un flux de travail intuitif pour accélérer la collecte et l'analyse des données.

L'UVISEL Plus est l'ellipsomètre spectroscopique le plus polyvalent pour les mesures d'épaisseur de couches minces et de constantes optiques dans les domaines de la recherche et du traitement des matériaux, des écrans plats, de la microélectronique et du photovoltaïque.

L'UVISEL Plus est considéré comme l'ellipsomètre de référence pour la science des matériaux avancés.

Segment: Scientific
Fabricant: HORIBA France SAS

Avantages du produit

  • Précision et sensibilité maximales
  • Conception modulaire
  • Large gamme spectrale : 190-2100 nm
  • Progiciel entièrement intégré pour la mesure, la modélisation et les opérations automatisées
     

Informations obtenues

  • Épaisseur de couche mince de 1 Å à 50 µm
  • Rugosité de surface et d'interface
  • Constantes optiques (n, k) pour les films isotropes, anisotropes et à gradient
  • Données optiques dérivées telles que : coefficient d'absorption α, bande interdite optique Eg
  • Propriétés des matériaux : composition des alliages composites, porosité, cristallinité, morphologie, etc.
  • Matrice de Mueller
  • Dépolarisation


Spécifications UVISEL

  • Gamme spectrale : de 190 à 885 nm │Jusqu'à 2100 nm avec l'option NIR
  • Détection : Monochromateur haute résolution couplé à des détecteurs sensibles
     

Configuration manuelle

  • Taille de spot : 0,05 – 0,1 – 1 mm (pinhole)
  • Table porte-échantillon : 150 mm, ajustement manuel de la hauteur (20mm) et de l'inclinaison
  • Goniomètre : Angle ajustable manuellement de 55° à 90° par pas de 5°
     

Configuration automatisée

  • Table porte-échantillon automatisée : table X-Y de 200x200 mm ou 300x300 mm, ajustement manuel de la hauteur (4mm) et de l'inclinaison, table XYZ, table theta
  • Goniomètre automatisé : Angle ajustable automatiquement de 45° à 90° par pas de 0.01°
     

Goniomètre intégré

  • Angle d'incidence, réglage manuel : 55° à 90° par pas de 5°
  • Porte-échantillon : 150mm, ajustement manuel de la hauteur sur 20mm
  • Système d'autocollimation pour l'alignement des échantillons en option
  • Dimensions : largeur : 25 cm; hauteur : 35 cm; profondeur : 21 cm
     

Configuation In situ

  • Adaptation mécanique : brides CF35 ou KF40
  • Passage facile des configurations in situ à ex situ
     

Options

  • Accessoires : cellule à température contrôlée, cellule pour liquides, cellule électrochimique, module de réflectométrie pour mesurer la réflectance à une incidence de 0°, etc.
  • Vision : caméra CCD
  • Pour en savoir plus sur les accessoires
     

Performances

  • Précision : Ψ= 45°±0,01° et Δ=0°±0,01° mesuré dans une configuration directe à l'air libre de 1,5 à 5,3 eV
  • Répétabilité : NIST 1000Å SiO2/Si (190-2100 nm): d ± 0,1 % – n(632,8nm) ± 0,0001
Ellipsometric Analysis of Cr₂O₃ Thin Films on Sapphire for Advanced Mirror Applications
Ellipsometric Analysis of Cr₂O₃ Thin Films on Sapphire for Advanced Mirror Applications
Characterizing advanced optical coatings requires more than thickness measurements. Discover how HORIBA UVISEL Plus combines advanced optical modeling and automated wafer mapping to reveal optical properties, film quality, and spatial uniformity within a single workflow.
Multi-Angle Spectroscopic Ellipsometry Analysis of a Mirror Sample: Determination of Optical Properties at Low Incident Angles
Multi-Angle Spectroscopic Ellipsometry Analysis of a Mirror Sample: Determination of Optical Properties at Low Incident Angles
How can optical coating performance be predicted beyond the measured conditions? Discover how HORIBA UVISEL Plus combines multi-angle spectroscopic ellipsometry and advanced optical modeling to accurately characterize mirror coatings and predict their optical behavior at non-measured incidence angles.
Characterization of DNA sensor pads using UVISEL Spectroscopic phase modulated Ellipsometer
Characterization of DNA sensor pads using UVISEL Spectroscopic phase modulated Ellipsometer
Spectroscopic Ellipsometric measurements on biochip structures in a liquid flow cell environment
Spectroscopic Ellipsometric measurements on biochip structures in a liquid flow cell environment
Characterization of Engineered nanomaterials by Spectroscopic Ellipsometry
Characterization of Engineered nanomaterials by Spectroscopic Ellipsometry
Characterization of photovoltaic devices by spectroscopic ellipsometry
Characterization of photovoltaic devices by spectroscopic ellipsometry
Characterization of TFT and LTPS TFT-LCD Display Panels by Spectroscopic Ellipsometry
Characterization of TFT and LTPS TFT-LCD Display Panels by Spectroscopic Ellipsometry
Spectroscopic ellipsometry is an excellent technique for the highly accurate characterization of TFT-LCD display panels based on a-Si and LTPS technologies. Owing to the sensitivity of the UVISEL spectroscopic ellipsometer and the advanced modeling features included in the DeltaPsi2 software it is possible to detect in a multistack different a-Si layers processed by various methods. Moreover the spectroscopic ellipsometry measurements allow determination of the grain size of p-Si films and illustrate the ability to characterize the crystallinity of silicon with high accuracy.
Encapsulated Organic Light Emitting Diode Devices Characterization by Spectroscopic Ellipsometry
Encapsulated Organic Light Emitting Diode Devices Characterization by Spectroscopic Ellipsometry
In this Application Note Spectroscopic Ellipsometry, a standard optical characterization technique used to measure multi-layered thicknesses and optical constants (n,k), has been successfully used to characterize encapsulated OLED devices. This report also investigates the aging process of OLED. Spectroscopic ellipsometry is a powerful technique to characterize the thickness and optical constants of encapsulated OLED devices. For the case of non-transparent encapsulation the combination of ellipsometric measurements via the glass substrate and the powerful modelling features of DeltaPsi2 software make it possible to analyze “this reverse sample”.
OLED – Organic Light Emitting Diodes
OLED – Organic Light Emitting Diodes
Phase Modulated Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of complete OLED stacks. The technique allows the determination of film thickness, optical properties and the effect of dopants to the active layers. For very high throughput applications where large area flat panels are to be characterized in a production environment the Jobin Yvon FF-1000 ellipsometer has a fully automated sample stage able to accept samples up to 1000 mm x 1000 mm. This accurate, automated thin film metrology tool delivers both unique performance and proven reliability for on-line quality control of production processes.
Optical Characterization of Organic Semiconductors by Spectroscopic Ellipsometry
Optical Characterization of Organic Semiconductors by Spectroscopic Ellipsometry
Spectroscopic Ellipsometers are optical thin film measurement tools for determining film thickness and optical constants (n,k) of thin film structures. They are widely used in the microelectronics, display, photonics, photovoltaics, lighting, optical and functional coating, biotechnology industries. When compared with other optical metrology instruments the unique strength of spectroscopic ellipsometers are based on their highly precise and simple experimental measurements plus physical and material information derived from optical constants characterization.
Plasma Display Panel Characterization Using Spectroscopic Ellipsometry
Plasma Display Panel Characterization Using Spectroscopic Ellipsometry
For multilayer structures it is always helpful and often necessary to know the properties of each film. Using the Jobin Yvon UNISEL NIR it is a straightforward procedure to investigate the thickness and optical properties of the complete PDP structure. To ensure high yields in quality and quantity the FF-1000 ellipsometer is dedicated to the flat panel industries with a fully automated large area sample stage able to accept samples up to 1000 mm x 1000 mm. This accurate, automated thin film metrology tool delivers both unique performance and proven reliability for online quality control of production processes.
TFT-LCD Display Characterization Using Spectroscopic Ellipsometry
TFT-LCD Display Characterization Using Spectroscopic Ellipsometry
Phase Modulated Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of complete TFT-LCD device. The technique allows the determination of film thickness, optical properties but also more complex properties such as graded or anisotropic layers and effect of dopants. In the flat panel industry the pressure to reduce manufacturing coasts is and reliable metrology tools are required to control the different steps of the process. Spectroscopic ellipsometry is a non-destructive technique which presents advanced capabilities and proven reliability tailored for qualification and on-line production control.
Ellipsometric Characterization and Modeling of Different Types of Nanoparticles
Ellipsometric Characterization and Modeling of Different Types of Nanoparticles
UVISEL ellipsometers have been used for the characterization of several systems of nanoparticles. This ellipsometric characterization involves the development of specific modeling tools available within DeltaPsi2 software. Through this report we illustrate the application of ellipsometry to the characterization of nanoparticle based samples. Our goal is to demonstrate that the technique can apply within a large panel of materials science. The HORIBA ellipsometric product line offers the most versatile hardware of the UVISEL series combined with the DeltaPsi2 software including unique modeling features to get the most of your applied work on this fascinating domain of modern physics.
An Ellipsometric Study of the Optical Constants of C60 & C70 Thin Films
An Ellipsometric Study of the Optical Constants of C60 & C70 Thin Films
Spectroscopic ellipsometry (SE) is used to determine the optical constants of C60 and C70 thin films over the range 0.6-6.5eV (i.e. 190-2100nm). The information provided by the optical constants allows for a better understanding of the electronic structure of these materials.
Ellipsometric Characterization of Doped and Undoped Crystalline Diamond Structures
Ellipsometric Characterization of Doped and Undoped Crystalline Diamond Structures
In this work, spectroscopic ellipsometry (SE) was successfully applied to characterize the optical properties and the thicknesses of doped and undoped diamond layers. The sensitivity of this technique enables the doped layer to be distinguished from the undoped one in a sample consisting of a stack of these two layers. Moreover, an interface between the two layers has been detected. This work and others reported previously show clearly that ellipsometry is the technique of choice for the characterization of optical and structural properties of layered materials thanks to its sensitivity and the wide range of information it provides.
Thickness and Optical Constants of Amorphous Carbon Coatings Measured by Spectroscopic Ellipsometry
Thickness and Optical Constants of Amorphous Carbon Coatings Measured by Spectroscopic Ellipsometry
The UVISEL Spectroscopic Ellipsometer is the ideal tool for reliable film thickness and optical constants characterization of amorphous carbon coatings, even in difficult cases where the film thickness is very thin. Roughness, and interface "adhesion" can also been determined.
Characterization of GeSbTe films by Spectroscopic Ellipsometry for Rewritable Optical Discs
Characterization of GeSbTe films by Spectroscopic Ellipsometry for Rewritable Optical Discs
Spectroscopic ellipsometry is a powerful technique for high accuracy characterization of the thickness and optical constants of GeSbTe multilayer system for rewritable optical disc applications. It was shown that measurement in the NIR range gives better accuracy for the analysis of these types of material. The use of the multiple sample analysis reduces parameter correlations and errors for the thinnest layers. Owing to the advanced modeling features included in the DeltaPsi2 software, it is a straightforward procedure to analyze such structures even with layers deposited on both sides of the substrate.
Raman Imaging of a Single Gallium Nitride Nanowire: Pushing the Limits of Confocal Microscopy
Raman Imaging of a Single Gallium Nitride Nanowire: Pushing the Limits of Confocal Microscopy
We have performed a complete Raman polarized study of a single GaN nanowire using a confocal microscope together with a high resolution stage. The high spatial resolution of our Raman confocal instrument together with a piezoelectric stage demonstrates unambiguously the possibility to image the optical properties of nano-objects with a resolution better than 200 nm keeping the fill advantage of the polarization control under a confocal microscope.
Ferroelectric Thin Films Characterization by Spectroscopic Ellipsometry PbZr1-xTixO3 & Ba1-xSrxTiO3
Ferroelectric Thin Films Characterization by Spectroscopic Ellipsometry PbZr1-xTixO3 & Ba1-xSrxTiO3
Spectroscopic ellipsometry is a powerful technique to characterize the thickness and optical constants of complex ferroelectric stacks with high accuracy and precision. Specific modelling features in this study include the characterization of the anisotropic sapphire substrate, rough overlayer and layer inhomogeneity with depth.
Determination of Perovskite Optical Constants
Determination of Perovskite Optical Constants
Hybrid organic-inorganic perovskite materials have emerged over the past five years as promising absorber layers for new high-efficiency and low-cost solar cells that combine the advantages of organic and inorganic semiconductors. The increasing interest in this technology is pushing research laboratories to find the optimal techniques for the accurate characterization of opto-electronic properties of these materials.
Studying perovskite solar cells with HORIBA Scientific equipment
Studying perovskite solar cells with HORIBA Scientific equipment
With their ~20 % efficiency, hybrid perovskite solar cells are the new promising candidate for next generation photovoltaics. Thanks to the wide HORIBA Scientific portfolio, different techniques can be used to gain in depth knowledge on the optoelectronic properties and mechanisms of this class of materials. In this application note we decided to use spectroscopic ellipsometry, steady-state and time-resolved fluorescence and Glow Discharge Optical Emission Spectroscopy to investigate the properties of CH3NH3PbI3 thin films deposited on a spin-coated PEDOT:PSS. The impact of the exposure to air was addressed.

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