2D Materials

The industrialization of 2D materials and their emergence in electronic devices will not only depend on the uniformity assessment of their deposition on large wafers but also on overcoming the presence of defects which reduces the size of high-quality crystals, and on preserving quality through the processing steps.

Raman/Photoluminescence characterization of Graphene and 2D semiconductors

Application: CMOS, electrodes, barriers

Materials: Graphene, Transition Metal Dichalcogenides, Hexagonal Boron Nitride (h-BN)

  • Measurement of layer thicknesses
  • Uniformity assessment: indication of graphene crystal quality and strain fluctuation; assessment of charge carrier concentration, stoichiometry and bandgap
  • Defect inspection: indication of defect density (intrinsic); visualization and identification of contaminants

Graphene Raman image of a 4" wafer

High resolution Raman image on defects

D/G distribution peak analysis

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