PRIMA-LED

General Features

• High-speed Micro PL Intensity Mapper with highly sensitive PMT
• R,G,B chip on wafer & Epi wafer measurement with size of 4″, 6”
• Simultaneous measurement of PL and Reflection (or Scattering) (patented)
• LED chip detection with leakage current
• Micro LED inspection.
  – Low intensity, no PL signal, abnormal high PL intensity can be classified
  – Chip indexing
  – Defect coordinating and reporting
• Microscopic image observation of specific areas
• Spectral characteristics analysis possible by designating a specific area in PL Mapping Data (mapping possible)
• Signal measurement in selective wavelength range using a monochromator is possible (Option)
• Epi wafer inspection

Integrated PL, AOI, and Spectrum Analysis

• PL Image
  • Detection Items:
    - Intensity: High/Low/No Signal
    - Chip Luminance: Average/Total
    - Standard Deviation/Coefficient of Variation (CV)
  • Chip Size ≥ 10 μm, Pitch ≥ 20 μm, Gap ≥ 3.5 μm
     
• AOI
  • Detects surface defects, cracks, pattern misalignment, and positioning errors
    Minimum detectable chip size: 1.5 μm
    Achieves composite judgment based on AOI and PL information
     
• Spectrum Analysis
  • Key spectrum parameters:
    - Wp (Peak Wavelength)
    - FWHM (Full width at half maximum)
    - II (Integrated intensity), Ip (Peak intensity)
  • Pitch Resolution
    - 0.5 mm (4-inch wafer), 1.0 mm (6-inch wafer), 2.0 mm (8-inch wafer)