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Depth Profile Analysis of Thin Multilayers with nanometric resolution by GD-OES PDF
This application note demonstrates the use of pulsed RF GD-OES for nanometric depth profiling of (Al,Ga)N quantum wells and quantum dots.
Advanced UV optoelectronic and high-power electronic devices rely on precise control of nanometric multilayer structures such as (Al,Ga)N quantum wells and quantum dots. This application note demonstrates how pulsed RF Glow Discharge Optical Emission Spectroscopy (GD-OES) enables rapid, high-resolution depth profiling of thin AlGaN/AlN multilayers grown by MBE and MOCVD. GD-OES enables rapid, depth-resolved elemental analysis with nanometer-scale resolution, clearly distinguishing Ga-rich layers as thin as 2 nm and the change of Al/Ga ratios across multiple samples. The technique combines nanometer-scale depth resolution with fast analysis time and minimal sample preparation, making it an efficient analytical solution for research laboratories and semiconductor manufacturing environments.
