Custom Spectroscopy Applications

Phosphor plays a key role to obtain white light as for blue LED + phosphor and near ultraviolet LED + phosphors. In order to improve high bright white LEDs, it is necessary that the whole phosphor particle emits light homogeneously. When measuring with CL the phosphor used as white LED, the area which does not emit light in phosphor particle can be observed. CL system is used for evaluation of non-luminescent area to improve luminescent efficiency and characteristics.

Time-resolved photoluminescence (TRPL) spectroscopy is an important tool which can be used to characterize optical materials such as LEDs and photovoltaic (PV) materials.

The characterization of synthetic CVD diamond material by hyperspectral cathodoluminescence spectroscopy and imaging allows the detection and accurate location of the promising NV luminescent point defects for innovative solid-state quantum mechanical systems. In this work we performed CVD epitaxial growth on a pattern of micro-pillars etched on a diamond substrate. Cathodoluminescence (CL) analysis revealed that NV centres were successfully localized at the edges of the pillars.

In this study we have chosen to investigate pyrite and its surrounding minerals in order to identify the different mineral phases as well as the chemical variations from micro- to nano-scale. Using the different microscopes instruments and being co-localized allows a comprehensive characterization of the sample and a precise superimposition of all the images.

The threading dislocation occurs easily in GaN crystal grown on sapphire substrates. It is said that this is caused by the large lattice mismatch of sapphire and GaN. The crystal may seem to be uniform in the SEM image, but the dark spot such as the threading dislocation can be observed when measuring the CL intensity image at the wavelength (362nm) which corresponds to the band edge emission.

HORIBA Spectrometers are used to characterize doped glasses for photonics

Photoluminescence spectroscopy (PL) is a powerful optical method used for characterizing materials. PL can be used to find impurities and defects in silicon and group III-V element semiconductors, and to determine semiconductor band-gaps.

Temperature-dependent photoluminescence (PL) spectroscopy is a powerful optical method for characterizing materials. PL can be used to identify defects and impurities in Si and III-V semiconductors, as well as determine semiconductor bandgaps. At room temperature, PL emission is usually broad—up to 100 nm in width.

As a result of rapid development in semiconductor manufacturing, many types of optoelectronic devices such as laser diodes, LEDs, and high-electron-mobility transistors (HEMTs) are now fabricated by epitaxial-growth methods.

Gallium Nitride (GaN) is one of a generation of promising light-emitting materials. Its direct energy band gap of ~3.4 eV at room temperature make it particularly suitable for emission in the blue, and near UV spectral ranges. The material often exhibits high temperature stability and low electrical leakage, and hence GaN is generally a good candidate for fabricating high-temperature and high-power devices.

In this article, we present the combination of Raman spectroscopy, Photoluminescence and SEM-CL techniques, where the instruments weren’t physically connected. Smart nanostructured materials require a comprehensive understanding of their morphology, elemental and chemical composition. nanoGPS Suite solution allows a colocalized combination of a variety of microscopy techniques, providing a full characterization of nanostructured materials and a precise superimposition of the results obtained.

Photoluminescence is the optical emission obtained by photon excitation (usually a laser) and is commonly observed with III-V semiconductor materials. This type of analysis allows non-destructive characterization of semiconductors (material composition, qualitative investigations, etc.

Research in nanoscience has garnered much interest because of the different properties of small structures compared to the respective bulk material.

III-V semiconductors are important to the fabrication of active photonic devices such as light sources and detectors. Successful fabrication of such devices relies on the high quality of the underlying materials and precise deposition of intended geometries on a wafer substrate.

Monolithic integration of optical components on CMOS platforms is ongoing in the optical communications industry. CMOS offers a mature and robust platform, and therefore is logical for building optical-interconnect modules.

InGaAs/GaAs and InAs/GaAs quantum dots (QDs) have been identified as suitable candidates for various applications in the terahertz range by using their intraband carrier transitions.

GaN and related alloys are important materials used to build short-wavelength light sources (lasers and LEDs). Room- and low-temperature photoluminescence (PL) are used to characterize these materials as well as device performance.

Internal Quantum Efficiency (IQE) and External Quantum Efficiency (EQE) measurements are indicators of the effectiveness of a photosensitive device such as those used in telecommunications and solar cells. EQE is the ratio of the charges generated to the total amount of photons incident on the surface; a larger EQE indicates a more efficient device.

To access intrinsic amino acids, such as tryptophan, as probes, the UV excitation wavelengths for pulsed phosphorescence measurements have long been the preserve of low-repetition-rate gas-filled lamps or larger laser systems. Recent developments have enabled the use of interchangeable semiconductor diodes...

Nanophotonics is one of the most exciting new fields to come out of nanotechnology. The quantum-confinement effects observed in these very small (~10 nm) particles can lead to unique optical properties.

The TRIAX and iHR series spectrometers used in Raman system configurations provide superior imaging performance with no re-diffracted light and maximized optical throughput.

Quantum dots (QDs) have potential applications in optoelectronics, biosensing, biolabeling, memory devices, and sources of laser light.

HORIBA Jobin Yvon’s NanoLog® spectrofluorometer, specially optimized for recording near-IR fluorescence from nanoparticles, includes a double-grating excitation monochromator, imaging emission spectrograph with a selectable-grating turret, and a variety of detectors.

Tryptophan phosphorescence within protein molecules is gaining attention as a probe of protein dynamics and structure. The tryptophan phosphorescence lifetime, τ, varies with the protein molecule’s local environment and conformation.

Single-wall carbon nanotubes (SWNTs), consisting of rolled-up single sheets of carbon atoms, have received much attention recently.

Among the possible fluorescence biosensors for medical and biochemical monitoring and imaging are the flavonoids, compounds that occur in many plants and their products, such as tea, chocolate, and red wine.