Photoluminescence Characterization of GaN Alloys and Other Semiconductor Microstructures

GaN and related alloys are important materials usedto build short-wavelength light sources (lasers and LEDs). Room- and low-temperature photoluminescence (PL) are used to characterize these materials as
well as device performance. Parameters such as IQE of quantum wells (QW) can be measured for patterned structures using selective optical excitation of microstructures made from these materials. Selective
excitation means fine control of laser-excitation beam size and positioning, and visualization of the sample under measurement.1

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