Photoluminescence of InGaAs/GaAs Quantum Dots
InGaAs/GaAs and InAs/GaAs quantum dots (QDs) have been identified as suitable candidates for various applications in the terahertz range by using their intraband carrier transitions.
Quantum dots (QDs) have potential applications in optoelectronics, biosensing, biolabeling, memory devices, and sources of laser light. We show that alloyed CdSeTe QDs possess a nonlinear change in their photoluminescence spectra, correlated to size and composition, as monitored by the versatile bench-top FluoroMax® spectrofluorometer. QDs’ emission can be as long as 850 nm, which may aid imaging deeper into living tissue than visible light can penetrate.
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