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In the fast-evolving world of semiconductor fabrication, maintaining accuracy, consistency, and efficiency is crucial to achieving high yields and reliable device performance. HORIBA provides advanced process control and metrology solutions that help manufacturers optimize critical steps, prevent defects, and ensure the highest quality standards.
From real-time monitoring of plasma etching and deposition processes, to high-precision measurements of wafer structures, HORIBA’s Optical Emission Spectroscopy (OES), hyperspectral imaging, and Raman spectroscopy, enable manufacturers to achieve stable, repeatable, and high-performance semiconductor production. Explore our solutions to see how we support innovation in semiconductor manufacturing.
Process control in semiconductor manufacturing ensures the accuracy, consistency, and efficiency of critical fabrication steps, such as plasma etching, deposition, and chamber cleaning. It is essential for maintaining high yield, preventing defects, and ensuring the reliability of advanced semiconductor devices.
Effective process control involves continuous monitoring of key parameters, rapid detection of deviations, and real-time adjustments to maintain optimal performance. Inadequate control can result in variations in plasma conditions or deposition quality, potentially leading to device failure and reduced operational efficiency.
To address these challenges, advanced diagnostic technologies like Optical Emission Spectroscopy (OES), (multiwavelength) interferometry and hyperspectral imaging—provide real-time insights into process dynamics. These tools enable precise endpoint detection, uniformity control, and contamination prevention, thereby supporting stable and repeatable manufacturing processes.
Metrology in semiconductor manufacturing ensures precision, quality control, and process optimization by enabling accurate measurements of wafers, thin films, and device structures. It is essential for detecting defects, maintaining uniformity, and ensuring high performance in advanced semiconductor devices.
This process involves techniques like reflectometry for layer thickness analysis, multitrack spectroscopy and hyperspectral imaging for wafer mapping, and Raman spectroscopy for material characterization. These methods provide critical insights into structural and compositional properties at the nanoscale.
HORIBA’s cutting-edge metrology solutions empower semiconductor manufacturers with high-precision measurements, ensuring process reliability, yield improvement, and compliance with the stringent demands of modern semiconductor fabrication.
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UV-VIS-NIR Spectrometer
Endpoint / Chamber Health Monitor based on Optical Emission Spectroscopy and MWL Interferometry
High Spectral Rate and High Dynamic Range Miniature Spectrometers
Multichannel Spectrometer and Hyperspectral Line Imager
Multispectra, Multifiber, Multichannel Imaging spectrometer with 8-16-32 Simultaneous UV-NIR Spectra
Camera Endpoint Monitor based on Real Time Laser Interferometry
TCSPC Pulsed Sources
Amplifier-Discriminator
HORIBA’s latest development in TCSPC detector technology
Single photons detection with picosecond accuracy
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