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UVISEL Plus
Spectroscopic Ellipsometer from FUV to NIR: 190 to 2100 nm
The Reference Ellipsometer for Thin Film Measurements
The UVISEL Plus ellipsometer offers the best combination of modularity and performance for advanced thin film, surface and interface characterization.
The new UVISEL Plus includes the newest acquisition technology designed to measure faster and more accurately than ever. FastAcq, the newest acquisition technology, is based on double modulation, designed for real world thin film characterization. Based on a new electronic, data processing and high speed monochromator, the new FastAcq technology enables a sample measurement from 190 to 2100nm to be completed within 3 minutes, at high resolution.
Based on phase modulation technology, the UVISEL Plus ellipsometer provides a powerful optical design to continuously cover the spectral range from 190 to 2100 nm. High quality data are delivered across the whole spectral range in terms of high accuracy, high resolution measurements and excellent signal to noise ratio.
The phase modulation technology characterizes polarization changes at high frequency (50 kHz), and without any mechanical movement. It results in:
- High accuracy measurements for all values of (Ψ,Δ)
- Excellent signal/noise ratio from the FUV to NIR
- Very fast data acquisition speed at up to 50 ms/point ideal for kinetic studies and in-situ real-time measurements
The UVISEL Plus phase modulated ellipsometer achieves higher sensitivity and accuracy for characterizing thin films when compared to conventional ellipsometers using rotating elements. It enables the detection of very thin films or interfaces that no other ellipsometers can see as well as the characterization of thick layers up to 50µm. The measurement and characterization of transparent samples with backside reflections are simple and accurate and doesn't require the scratch of the backside.
Designed for enhanced flexibility for thin film measurements, the UVISEL Plus offers microspots for patterned samples, variable angle, automatic mapping stage and a variety of accessories, making it scalable to meet all of your application and budget needs.
The modular design of the UVISEL Plus makes it possible to be used either as a benchtop metrology tool, or for in-situ integration on process chambers. or roll to roll machines.
The UVISEL Plus is controlled by either the DeltaPsi2 software platform or the Auto-Soft interface that are common to all HORIBA ellipsometers. DeltaPsi2 provides a complete measurement and modelling package allowing to address both routine and advanced thin film applications, while the Auto-Soft interface features an intuitive worksflow to speed up data collection and analysis.
The UVISEL Plus and its FastAcq technology is the most versatile spectroscopic ellipsometer for thin film thickness and optical constant measurements in the fields of materials research and processing, flat panel displays, microelectronics and photovoltaics.
The UVISEL Plus is considered a Reference ellipsometer for ultimate materials science.
Product benefits
- Highest accuracy and sensitivity
- Modular design
- Large spectral range: 190-2100 nm
- Fully integrated software package for measurement, modelling and automatic operations
Obtained information
- Thin film thickness from 1Å to 50 µm
- Surface and interface roughness
- Optical constants (n,k) for isotropic, anisotropic and graded films
- Derived optical data such as: absorption coefficient α, optical bandgap Eg
- Material properties: compound alloy composition, porosity, crystallinity, morphology and more
- Mueller matrix
- Depolarization
UVISEL Specifications
- Spectral range: from 190 to 885 nm │NIR extension option up to 2100 nm
- Detection: High resolution monochromator coupled to sensitive detectors
Manual Configuration
- Spot size: 0.05 – 0.1 – 1 mm (pinhole)
- Sample stage: 150 mm, manual height (20mm) and tilt adjustment
- Goniometer: Manually adjustable angle from 55° to 90° by step of 5°
Automatic Configuration
- Manual or automated spot size: 0.05 - 0.1 - 1 mm or 0.08 - 0.12 - 0.25 - 1.2 mm (pinhole)
- Automation sample stage: 200x200mm, 300x300 mm XY sample stage, manual height (4mm) and tilt adjustment, XYZ sample stage, theta stage
- Automatic goniometer: Automatically adjustable angle from 45° to 90° by step of 0.01°
Integrated Goniometer
- Manual angle of incidence: 35° to 90° by 5° step
- Sample holder: 150mm, 20mm manual z height adjustment
- Autocollimation system for sample alignment in option
- Dimension: width: 25cm; height: 35cm; depth: 21 cm
In situ configuration
- Mechanical adaptation: CF35 or KF40 flanges
- Easy swith between in-situ and ex-situ configurations
- More information
Options
- Accessories: temperature controlled cell, liquid cell, electrochemical cell, reflectometry module to measure reflectance at 0° incidence, and more
- Vision: CCD camera
- More information
Performance
- Accuracy: Ψ= 45°±0.01° and Δ=0°±0.01° measured in straight-through air configuration1.5 – 5.3 eV
- Repeatability: NIST 1000Å SiO2/Si (190-2100 nm): d ± 0.1 % – n(632.8nm) ± 0.0001
Characterization of DNA sensor pads using UVISEL Spectroscopic phase modulated Ellipsometer
Spectroscopic Ellipsometric measurements on biochip structures in a liquid flow cell environment
Characterization of Engineered nanomaterials by Spectroscopic Ellipsometry
Characterization of photovoltaic devices by spectroscopic ellipsometry
Characterization of TFT and LTPS TFT-LCD Display Panels by Spectroscopic Ellipsometry
Spectroscopic ellipsometry is an excellent technique for the highly accurate characterization of TFT-LCD display panels based on a-Si and LTPS technologies. Owing to the sensitivity of the UVISEL spectroscopic ellipsometer and the advanced modeling features included in the DeltaPsi2 software it is possible to detect in a multistack different a-Si layers processed by various methods. Moreover the spectroscopic ellipsometry measurements allow determination of the grain size of p-Si films and illustrate the ability to characterize the crystallinity of silicon with high accuracy.
Encapsulated Organic Light Emitting Diode Devices Characterization by Spectroscopic Ellipsometry
In this Application Note Spectroscopic Ellipsometry, a standard optical characterization technique used to measure multi-layered thicknesses and optical constants (n,k), has been successfully used to characterize encapsulated OLED devices. This report also investigates the aging process of OLED.
Spectroscopic ellipsometry is a powerful technique to characterize the thickness and optical constants of encapsulated OLED devices. For the case of non-transparent encapsulation the combination of ellipsometric measurements via the glass substrate and the powerful modelling features of DeltaPsi2 software make it possible to analyze “this reverse sample”.
OLED – Organic Light Emitting Diodes
Phase Modulated Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of complete OLED stacks. The technique allows the determination of film thickness, optical properties and the effect of dopants to the active layers. For very high throughput applications where large area flat panels are to be characterized in a production environment the Jobin Yvon FF-1000 ellipsometer has a fully automated sample stage able to accept samples up to 1000 mm x 1000 mm. This accurate, automated thin film metrology tool delivers both unique performance and proven reliability for on-line quality control of production processes.
Optical Characterization of Organic Semiconductors by Spectroscopic Ellipsometry
Spectroscopic Ellipsometers are optical thin film measurement tools for determining film thickness and optical constants (n,k) of thin film structures. They are widely used in the microelectronics, display, photonics, photovoltaics, lighting, optical and functional coating, biotechnology industries. When compared with other optical metrology instruments the unique strength of spectroscopic ellipsometers are based on their highly precise and simple experimental measurements plus physical and material information derived from optical constants characterization.
Plasma Display Panel Characterization Using Spectroscopic Ellipsometry
For multilayer structures it is always helpful and often necessary to know the properties of each film. Using the Jobin Yvon UNISEL NIR it is a straightforward procedure to investigate the thickness and optical properties of the complete PDP structure. To ensure high yields in quality and quantity the FF-1000 ellipsometer is dedicated to the flat panel industries with a fully automated large area sample stage able to accept samples up to 1000 mm x 1000 mm. This accurate, automated thin film metrology tool delivers both unique performance and proven reliability for online quality control of production processes.
TFT-LCD Display Characterization Using Spectroscopic Ellipsometry
Phase Modulated Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of complete TFT-LCD device. The technique allows the determination of film thickness, optical properties but also more complex properties such as graded or anisotropic layers and effect of dopants. In the flat panel industry the pressure to reduce manufacturing coasts is and reliable metrology tools are required to control the different steps of the process. Spectroscopic ellipsometry is a non-destructive technique which presents advanced capabilities and proven reliability tailored for qualification and on-line production control.
Ellipsometric Characterization and Modeling of Different Types of Nanoparticles
UVISEL ellipsometers have been used for the characterization of several systems of nanoparticles. This ellipsometric characterization involves the development of specific modeling tools available within DeltaPsi2 software. Through this report we illustrate the application of ellipsometry to the characterization of nanoparticle based samples. Our goal is to demonstrate that the technique can apply within a large panel of materials science. The HORIBA ellipsometric product line offers the most versatile hardware of the UVISEL series combined with the DeltaPsi2 software including unique modeling features to get the most of your applied work on this fascinating domain of modern physics.
An Ellipsometric Study of the Optical Constants of C60 & C70 Thin Films
Spectroscopic ellipsometry (SE) is used to determine the optical constants of C60 and C70 thin films over the range 0.6-6.5eV (i.e. 190-2100nm). The information provided by the optical constants allows for a better understanding of the electronic structure of these materials.
Ellipsometric Characterization of Doped and Undoped Crystalline Diamond Structures
In this work, spectroscopic ellipsometry (SE) was successfully applied to characterize the optical properties and the thicknesses of doped and undoped diamond layers. The sensitivity of this technique enables the doped layer to be distinguished from the undoped one in a sample consisting of a stack of these two layers. Moreover, an interface between the two layers has been detected. This work and others reported previously show clearly that ellipsometry is the technique of choice for the characterization of optical and structural properties of layered materials thanks to its sensitivity and the wide range of information it provides.
Thickness and Optical Constants of Amorphous Carbon Coatings Measured by Spectroscopic Ellipsometry
The UVISEL Spectroscopic Ellipsometer is the ideal tool for reliable film thickness and optical constants characterization of amorphous carbon coatings, even in difficult cases where the film thickness is very thin. Roughness, and interface "adhesion" can also been determined.
Characterization of GeSbTe films by Spectroscopic Ellipsometry for Rewritable Optical Discs
Spectroscopic ellipsometry is a powerful technique for high accuracy characterization of the thickness and optical constants of GeSbTe multilayer system for rewritable optical disc applications. It was shown that measurement in the NIR range gives better accuracy for the analysis of these types of material. The use of the multiple sample analysis reduces parameter correlations and errors for the thinnest layers. Owing to the advanced modeling features included in the DeltaPsi2 software, it is a straightforward procedure to analyze such structures even with layers deposited on both sides of the substrate.
Raman Imaging of a Single Gallium Nitride Nanowire: Pushing the Limits of Confocal Microscopy
We have performed a complete Raman polarized study of a single GaN nanowire using a confocal microscope together with a high resolution stage. The high spatial resolution of our Raman confocal instrument together with a piezoelectric stage demonstrates unambiguously the possibility to image the optical properties of nano-objects with a resolution better than 200 nm keeping the fill advantage of the polarization control under a confocal microscope.
Ferroelectric Thin Films Characterization by Spectroscopic Ellipsometry PbZr1-xTixO3 & Ba1-xSrxTiO3
Spectroscopic ellipsometry is a powerful technique to characterize the thickness and optical constants of complex ferroelectric stacks with high accuracy and precision. Specific modelling features in this study include the characterization of the anisotropic sapphire substrate, rough overlayer and layer inhomogeneity with depth.
Determination of Perovskite Optical Constants
Hybrid organic-inorganic perovskite materials have emerged over the past five years as promising absorber layers for new high-efficiency and low-cost solar cells that combine the advantages of organic and inorganic semiconductors. The increasing interest in this technology is pushing research laboratories to find the optimal techniques for the accurate characterization of opto-electronic properties of these materials.
Studying perovskite solar cells with HORIBA Scientific equipment
With their ~20 % efficiency, hybrid perovskite solar cells are the new promising candidate for next generation photovoltaics. Thanks to the wide HORIBA Scientific portfolio, different techniques can be used to gain in depth knowledge on the optoelectronic properties and mechanisms of this class of materials. In this application note we decided to use spectroscopic ellipsometry, steady-state and time-resolved fluorescence and Glow Discharge Optical Emission Spectroscopy to investigate the properties of CH3NH3PbI3 thin films deposited on a spin-coated PEDOT:PSS. The impact of the exposure to air was addressed.
