Optical Emission Spectroscopy Etching End-point Monitor
This emission analysis type end-point monitor is intended for end-point detection or plasma condition control in the plasma-based semiconductor thin-film process. The newly-developed Rapture Intensity algorithm allows accurate end-point detection by capturing faint signal changes. The ability of capturing subtle changes in emission has significantly improved the sensitivity. The enhanced noise immunity ensures highly stable operation in hostile environments of round-the-clock manufacturing lines.
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