Event
Beginning: 05/27/25
Location: Online
Wide bandgap semiconductors such as SiC, GaN, and diamond are critical materials for next-generation power electronics, optoelectronics, and quantum technologies. However, their performance is highly sensitive to internal stress, strain, and defects introduced during growth and processing.
In this webinar, we will explore how Raman, Photoluminescence (PL), Time-Resolved Photoluminescence and Cathodoluminescence can be powerful, non-destructive tools for characterizing these properties with high spatial and spectral resolution.
We will discuss how Raman spectroscopy can reveal information about crystal quality, phonon shifts due to strain, and temperature effects, while PL provides insight into electronic and optical properties, impurity levels, and defect states.
Real-world case studies and application examples will highlight how these techniques can be used to optimize material growth, improve device yield, and accelerate R&D.
Whether you're working in materials research, device fabrication, or failure analysis, this session will help you unlock deeper insights into the structure-property relationships of wide bandgap semiconductors.
