CMP

In CMP process, the concentrations of oxidizers and reducers in the slurry, particle size, and pH all affect polishing rate and final surface quality. HORIBA provides measurement instruments needed to monitor slurry solutions, as well as analytical instruments for evaluating wafer damage caused by CMP, contributing to improved CMP yield.

Characterization of CMP Slurry

Colloidal silica used in CMP slurry is a nanoparticle material. The Partica CENTRIFUGE, Centrifugal Nanoparticle Analyzer, can measure particle size distributions with high resolution and excellent reproducibility.

Centrifugal Nanoparticle Analyzer
Partica CENTRIFUGE

Quantitative Analysis of Components in CMP Slurry

CMP slurry contains various components, including colloidal particles, oxidizers, chelating agents, and corrosion inhibitors, which improve polishing performance. The MacroRAM Benchtop Raman Spectrometer enables quick, simple, and accurate quantification of CMP slurry components, reducing costs and improving usability compared with conventional analytical methods.

Benchtop Raman Spectrometer
MacroRAM

Zeta Potential Analysis of Polishing Particles in CMP Slurry

The nanoPartica SZ-100V2 Nanoparticle Analyzer can measure the zeta potential of slurry particles using just 100 μL of sample. In post-CMP cleaning, analyzing residual material on the wafer surface is essential, and zeta potential is one of the key evaluation indicators. By identifying the causes of insufficient cleaning after CMP, it helps achieve a more stable CMP process.