Measurement Solutions for Accelerating SOFC and SOEC Development Time-to-Market

HORIBA's GD-Profiler 2™ is solving key SOFC and SOEC challenges across R&D, development, and manufacturing.

As solid oxide fuel cell (SOFC) and solid oxide electrolyzer (SOEC) technologies move rapidly toward commercial deployment, the pressure to shorten development cycles and industrialize production has never been higher. Manufacturers must simultaneously improve material performance, scale up production processes, extend durability, and ensure that feedback from the field informs each new technology iteration.

GD-Profiler 2™ Glow Discharge Optical Emission Spectroscopy (GD-OES) is a powerful tool supporting quality control, post-mortem analysis, and competitor product assessment across every stage of the SOFC/SOEC value chain. GD-Profiler 2™ with patented pulsed Radio Frequency (RF) delivers high-resolution, multi-layer elemental depth profiles in minutes that reveal what truly happens within complex multi-layer cells—helping teams make smarter decisions, faster.
 

Ready to gain deeper insight into your SOFC and SOEC cells? Explore GD-Profiler 2™.

Who benefits from GD-Profiler 2™ GD-OES?

GD-Profiler 2™ pulsed RF GD-OES system for high-resolution elemental depth profiling of multilayer materials
  • Production Managers ensuring consistent quality of multilayer cells in high-volume manufacturing
     
  • Mechanical & Process Engineers addressing issues such as chromium poisoning, coking during direct-internal reforming, and other degradation mechanisms
     
  • Product Managers seeking rapid, data-driven insights for benchmarking purposes
     
  • R&D Engineers analyzing degradation mechanisms such as catalyst relocation, delamination, or barrier-layer formation
     
  • Innovators developing next-generation SO technologies, including intermediate-temperature systems and Proton-Ceramic Cells (PCCs)

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Why Elemental Distribution Insights Matter in SOFC/SOEC:

  1. Quality Control During Manufacturing
    SOFC/SOEC cells are delicate, multilayer structures composed of numerous functional materials. Any deviation in composition, layer thickness, uniformity, or contamination can compromise performance, durability, and yield. GD-Profiler 2™ provides fast, reliable feedback on elemental homogeneity and interface integrity - helping production teams maintain consistent quality across the line.
     
  2. Understanding Degradation Mechanisms
    Challenges such as chromium-VI poisoning, silica leaching from glass sealants, or carbon deposition during natural-gas reforming can severely reduce cell performance and lifetime. While electrochemical tests capture the effects, GD-Profiler 2™ reveals the root causes by showing exactly where contaminants accumulate and which interfaces are most vulnerable.
     
  3. Competitive analysis
    Rapid screening of competitor cells for benchmarking provides valuable intelligence on material compositions, layer architecture, and interface chemistry—ensuring you maintain a competitive edge in product development.
     
  4. Faster Post-Mortem Analysis
    SOFC/SOEC devices operate in harsh environments, leading to complex degradation pathways. GD-Profiler 2™ delivers high-resolution elemental depth profiles within minutes, revealing catalyst migration, delamination effects, barrier-layer formation, and impurity build-up—without the costly and time-consuming preparation required for SEM/TEM.

Technical Features & Advantages of GD-Profiler 2™ GD-OES :

GD-OES elemental depth profile showing layer thickness and material composition across an SOFC cell structure
  • Measures both light and heavy elemental concentrations—from Hydrogen to Uranium
    • Including key SOFC/SOEC materials: Y, Zr, Sc, Gd, Ce, Sr, Ni, C, O, La, Co, Cr, Sm, and many others.
       
  • Patented Pulsed and Synchronized Radio Frequency
    • Pulsed RF source with high instantaneous power for fast sample sputtering and enhanced signal/ noise ratio with pulse synchronized acquisition of emitted signals for analyzing elemental composition throughout the depth of the multilayer structure.
       
  • Versatile analysis of all solid samples and rapid results
    • Only requires flat solid samples. Complete, high-quality analyses are produced within minutes.
       
  • Patented Differential Interferometry Profiling (DiP)
    • Delivers nanometer-scale direct depth measurement and simultaneous elemental concentration.
       
  • High Dynamic Range Detectors (HDD)
    • Automatically optimize emission sensitivity, enabling trace-level detection in one layer and major-element quantification in the next—without compromise.
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Pulsed RF GD-OES with DiP Brochure
Discover how GD-Profiler 2™ Pulsed RF GD-OES with DiP delivers fast, high-resolution elemental depth profiling for quality control, failure analysis, and advanced materials R&D.
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0.87 MB
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Application of RF GD-OES for SOFC Materials Analysis
Explore real-world applications of RF GD-OES for fast elemental depth profiling of SOFC materials and interconnects under severe operating conditions.
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Ready to Solve Your SOFC and SOEC Development Challenges?

With GD-Profiler 2™, featuring pulsed RF GD-OES technology, you’re not just investing in an analytical instrument—you’re unlocking faster, deeper insight into material composition, layer integrity, and degradation mechanisms across SOFC and SOEC development.

Learn more about the GD-Profiler 2™ to see how GD-OES can support your SOFC and SOEC roadmap.

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