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  • The SMS system uses mainly reflective optics in its design, offering a wide spectral range for both excitation (266 nm – 1064 nm) and emission (250 nm – 2200 nm)
  • Map up to 300 mm wafers
  • Multiplex different techniques on one system, such as filter-based fluorescence imaging and full hyperspectral photoluminescence imaging

Different semiconductor materials, such as ZnO, GaN, GaAs, CdTe, CIGS, InP and GaSb characterized with an SMS system emitting photoluminescence from 200 nm to 2000 nm.

PL mapping performed on a fabricated InP device showing PL peak intensity, peak position and FWHM of the emission and its attributed histogram of the data.

Photoluminescence Specifications

Spectrometer and Detectors
Excitation Lasers1266 nm, 325 nm, 405 nm, 532 nm, 633 nm, 785 nm, 980 nm, 1064 nm
Spectral Range (nm)2250 nm – 2200 nm
Recommended Gratings31800 g/mm, 600 g/mm, 300 g/mm
Spectral Resolution4 (nm)0.390.180.1
Microscope Objectives5Magnification10X50X100X
 Spot Size (fiber-coupled)< 50 μm< 12 μm< 6 μm
 Spot Size (free space-coupled)< 10 μm< 5 μm< 2 μm
Sample StageXYZ (Manual and motorized options available) – 75 x 50 mm; 100 x 100 mm; 150 x 150 mm; 300 x 300 mm
Vision CameraSoftware controlled vision camera included

1 Other laser wavelengths available on request
2 Extension into mid IR available on request
3 Other gratings available on request
4 Based on 1200 g/mm grating at 500 nm and a 26 μm pixel CCD
5 Reflective objectives may be recommended if working in the UV or using multiple sources that cover a broad spectral range

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