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Ellipsomètre spectroscopique pour la mesure simple de couches minces

L'Auto SE est un outil de mesure des couches minces qui permet une analyse entièrement automatique des échantillons à l'aide d'un simple clic sur un bouton.

L'analyse d'échantillons ne prend que quelques secondes et fournit un rapport complet décrivant en détail l'empilement de couches minces, notamment l'épaisseur des couches, les constantes optiques, la rugosité de surface et les hétérogénéités des couches.

L'Auto SE est un instrument hautement performant qui comprend une platine XYZ automatique, une imagerie en temps réel du site de mesure et une sélection automatique de la taille du spot. De nombreux accessoires sont disponibles pour s'adapter à une large gamme d'applications.

L'instrument dispose d'indicateurs de diagnostic intégrés pour la détection et le diagnostic automatiques des problèmes, avec des instructions complètes à l'intention de l'opérateur pour le dépannage.

L'Auto SE se distingue par sa facilité d'utilisation et ses nombreuses fonctionnalités automatisées qui en font un instrument clé en main idéal pour les mesures de routine sur les couches minces et le contrôle qualité.

Segment: Scientific

Division: Spectroscopic Ellipsometry

Fabricant: HORIBA France SAS

Analyse des couches minces simplifiée grâce à des routines automatiques
Système hautement performant
Visionnage de l'échantillon
Microspot jusqu'à 25 x 60 µm
Grand choix d'accessoires

Plage spectrale : 440-1000 nm
Tailles des spots : sélection automatique 500x500 µm ; 250x500 µm ; 250x250 µm ; 70x250 µm ; 100x100 µm ; 50x60 µm ; 25x60 µm
Détection : CCD – Résolution : 2 nm
Support d'échantillon : mandrins à vide, hauteur en Z de 40 mm
Visualisation de l'échantillon : caméra CCD - Champ de vision : 1,33 x 1 mm – Résolution : 10 µm
Goniomètre : fixé à 70° - Possibilité de réglage à 66° et 61,5°
Nombreux accessoires
Temps de mesure : <2 s, généralement 5 s
Précision : NIST 100 nm d ± 4 Å, n(632,8 nm) ± 0,002
Répétabilité : NIST 15 nm ± 0,2 Å

Characterization of LED Thin Film Devices by Spectroscopic Ellipsometry

Driven by applications like LED-backlit TVs and solid-state lighting, the global LED market is growing rapidly. The main challenges for general LED lighting include reducing overall production costs and increasing efficiency and lifetimes. The performance of a LED which is characterized by its wall-plug efficiency depends on the design and overall material properties of the LED thin film structure. Ellipsomentry may be used for the accurate determination of the thickness and optical constants of the LED device for both research and industrial applications. Accurate control of thickness and refractive index is vital for the optimization of device properties and for industrial quality control.

Characterization of Organic Light Emitting Diodes (OLED) by Spectroscopic Ellipsometry

OLED technology is playing an important role in display technology since it offers several advantages compared to LCD technology among which its efficiency and high display quality, a high contrast rate, lower energy consumption, etc. Furthermore, this technology has an ecological aspect since it uses organic recyclable materials. However the improvement of the performances of the devices produced by these technologies requires a precise knowledge of their optical and structural properties that could be provided by spectroscopic ellipsometry. This non destructive and sensitive optical technique is able to characterize layers with thicknesses of some angstroms and provides information regarding the state of the surface, the microstructure of composite materials, etc.

Optical Characterization of Organic Semiconductors by Spectroscopic Ellipsometry

Spectroscopic Ellipsometers are optical thin film measurement tools for determining film thickness and optical constants (n,k) of thin film structures. They are widely used in the microelectronics, display, photonics, photovoltaics, lighting, optical and functional coating, biotechnology industries. When compared with other optical metrology instruments the unique strength of spectroscopic ellipsometers are based on their highly precise and simple experimental measurements plus physical and material information derived from optical constants characterization.

Spectroscopic Ellipsometry of Compound Semiconductors: AlxGa1-xN / GaN Hetero-Structures

Liquid Crystal Modulation Spectroscopic Ellipsometry is an excellent technique for the highly accurate characterization of the compound semiconductor heterostructure AlGaN / GaN. Using the MM-16 spectroscopic ellipsometer it is a straightforward procedure to determine the film thickness and optical dispersions of the complete structure even where the film is several microns thick. The detailed knowledge of the optical parameters of AlGaN alloys is crucial for example for the design of opto-electronic devices. Furthermore, from the optical parameters a calibration curve could be constructed to provide a rapid and efficient determination of the Al content in the AlGaN layers. Thus Spectroscopic Ellipsometry also proves a non-destructive technique for AlGaN alloy composition determination. This method can be equally applied to other compound emiconductors such as SiGe, II-VI semiconductors or classical III-V semiconductors.

Size: 8.68 MB

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