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Monitoring Sub-surface Stress in 4H-SiC Using Raman Spectroscopy

Application note: Monitoring Sub-surface Stress in 4H-SiC Using Raman Spectroscopy, illustration picture

Raman spectroscopy is an essential analytical technique in materials science, offering non-destructive, contactless measurement of vibrational modes that are sensitive to crystal structure, composition, and mechanical stress.  In the case of wide bandgap semiconductors like silicon carbide (SiC), which are widely used in high-power and high-temperature electronic applications, understanding and controlling stress is critical. Stress can influence electronic properties, impact device performance, and affect long term reliability. This application note presents how Raman spectroscopy can be effectively applied to monitor and evaluate stress during surface processing of 4H-SiC substrates.

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Application note: Monitoring Sub-surface Stress in 4H-SiC Using Raman Spectroscopy
Raman spectroscopy enables precise, non-destructive stress analysis in 4H-SiC semiconductors. This study shows how peak shifts in Raman spectra reveal stress variations from surface treatments like cutting, lapping, and CMP—supporting quality control and process optimization in electronics.
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