The 4H polytype of silicon carbide (4H-SiC) is a wide-bandgap semiconductor that has emerged as a critical material for high-performance power electronics, including MOSFETs, Schottky diodes, and high-frequency devices. With a bandgap of approximately 3.26 eV, a high thermal conductivity of 4–4.9 W/cm·K, and a high critical electric field (~3 MV/cm), 4H-SiC enables operation at higher voltages, temperatures, and switching frequencies than conventional silicon.
These intrinsic properties allow for thinner drift layers, smaller chip areas, and efficient thermal management, which are key advantages in compact and high-efficiency power devices. However, the exceptional performance of 4H-SiC is strongly dependent on the crystalline quality of the material. Even low densities of structural defects can significantly degrade device performance by introducing leakage paths, lowering carrier lifetime, or affecting threshold voltage stability.
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