Spectroscopic characterization and detection of yield-killing defects in micro-LED wafersEmerging display technologies demand high brightness, low power consumption and longer lifetime. Arrays, of self-emitting, micron-sized LEDs or Micro-LED (µLED), are considered a strong contender to replace current OLED or LCD displays.
Micro-Photoluminescence Mapping and Identification of Yield-Killing Defects in 4H-SiCThis application note demonstrates how deep-UV optimized HORIBA multimodal SMS can be applied to characterize PVT-grown 4H-SiC substrates, as well as epitaxial 4H-SiC structures.
How Raman Spectroscopy can measure nanoelectronics structuresRaman spectroscopy is an essential tool for the characterization of semiconductors. However, Raman spectroscopy's spatial resolution is limited by the diffraction limit to about 200-300 nanometers, which can be insufficient for analyzing the increasingly smaller features of modern electronic devices.
Monitoring Sub-surface Stress in 4H-SiC Using Raman SpectroscopyRaman spectroscopy enables precise, non-destructive stress analysis in 4H-SiC semiconductors. This study shows how peak shifts in Raman spectra reveal stress variations from surface treatments like cutting, lapping, and CMP—supporting quality control and process optimization in electronics.
碳纳米管的直径(厚度)分布与分散/聚集状态的表征碳纳米管(CNTs)是一种完全由碳原子组成的薄、轻、柔性的弦状材料。CNTs容易聚集,因此了解和控制其聚集状态是达到预期性能的关键。为此,需要一种能够快速评估从孤立分散到聚集的宽粒径分布(PSD)的高分辨率分析方法。 本文使用 Partica CENTRIFUGE 离心式纳米粒度分析仪,对三家公司的四种碳纳米管进行了测量。表明了分析仪的颗粒表征能力,将有助于碳纳米管的性能评估和质量控制。
硅片中氧的定量分析硅片中氧的浓度对硅片的电阻有很大影响。因此,即使硅片中仅含有极少量的氧,对其浓度的控制也是至关重要的。然而,在分析高掺杂单晶硅时出现了一个挑战,由于其独特的性质和高掺杂水平,分析这些样品中的氧变得非常困难,杂质和掺杂剂的存在会干扰使用 FT-IR 光谱法对氧浓度的精确测量。