Material Characterization

For over 50 years, HORIBA’s analytical technologies for material characterization have supported the R&D and manufacturing of advanced semiconductor devices, from material evaluation to final inspection. Used in semiconductor fabs and research institutions, our solutions cover the entire process from ingots to finished devices. With a broad portfolio of measurement technologies, we deliver critical data that improves process efficiency and provide comprehensive support for both R&D and production.

Applications : CMOS, Electrodes, and Barriers
Materials : Graphene, Transition Metal Dichalcogenides, Hexagonal Boron Nitride (h-BN)
Information : 
・Layer thickness (Raman, Ellipsometer)
・Crystal quality, Change carrier concentration, Stoichiometry and Band-gap (Raman, Photoluminescence)
・ Defect density, Visualization and identification of contaminants (Raman, Photoluminescence)

Applications : Power devices, Displays, LEDs, Laser diodes, Quantum wells
Materials : GaN, SiC, Ga₂O₃, GaAs, InGaAs, InP, etc.
Information : 
・Stress & Crystalline structure (Raman)
・Doping level (Raman)
・Carrier lifetime (Time-resolved Photoluminescence)
・Epitaxial layer growth uniformity & Detection of impurities (Photoluminescence)
・Optical constants, Band-gap, Film thickness (Spectroscopic Ellipsometer)
・Elemental analysis in depth (GD-OES)

Applications : 2D/3D Transistors, Photovoltaics
Materials : Si, Ge, SiGe
Information : 
・Optical constants, Band-gap, Film thickness (Spectroscopic Ellipsometer)
・Stress and composition measurements (Raman)
・Phase identification (crystalline, micro-crystalline, amorphous) (Raman)
・Crystallographic defects detection (Raman)

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