Deposition process is a key step in the semiconductor industry. HORIBA offers a wide range of products to optimize this process and to increase the yield
Chemical vapor deposition (CVD) is a deposition method used to produce high quality, high-performance, solid materials, typically under vacuum. The process is often used in the manufacture of semiconductors and in the production of thin films.
In typical CVD, the substrate is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. CVD has an extended family of processes which build upon the primary principles of CVD most commonly these are:
Atmospheric pressure CVD (APCVD) / Low-pressure CVD (LPCVD)
Ultrahigh vacuum CVD (UHVCVD)
Plasma-Enhanced CVD (PECVD)
Metalorganic chemical vapor deposition (MOCVD)
Physical vapor deposition (PVD) describes a variety of vacuum deposition methods which can be used to produce thin films and coatings. PVD is characterized by a process in which the material goes from a condensed phase to a vapor phase and then back to a thin film condensed phase. The most common PVD processes are sputtering and evaporation. PVD is used in the manufacture of items which require thin films for mechanical, optical, chemical or electronic functions.
Sputtering techniques include; Magnetron, Ion Beam, Reactive, Ion Assisted, Gas Flow.
Evaporation involves two basic processes: a hot source material evaporates and condenses on the substrate.
Endpoint / Chamber Health Monitor based on Optical Emission Spectroscopy and MWL Interferometry
Multispectra, Multifiber, Multichannel Imaging spectrometer with 8-16-32 Simultaneous UV-NIR Spectra
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