Characterization of LED Thin Film Devices by Spectroscopic Ellipsometry

Image of a packaged deep UV LED.

A semiconductor LED is a solid-state device that emits incoherent light in a narrow spectral range when a forward bias is applied. The wavelength of the emitted light is dependent on the energy bandgap (Eg) of the material used in the active region of the device.

Driven by applications like LED-backlit TVs and solid-state lighting, the global LED market is growing rapidly. The main challenges for general LED lighting include reducing overall production costs and increasing efficiency and lifetimes.

LED lighting is already used in a wide variety of applications such as signs and displays, back-lighting of LCD displays, traffic signals, automotive (dashboard and external lights), and for architectural displays. The performance of a LED which is characterized by its wall-plug efficiency depends on the design and overall material properties of the LED thin film structure.

Ellipsometry may be used for the accurate determination of the thickness and optical constants of the LED device for both research and industrial applications. Accurate control of thickness and refractive index is vital for the optimization of device properties and for industrial quality control.

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Spectroscopic Ellipsometer for Simple Thin Film Measurement

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