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c-AFM and in operando TERS & ┬ÁRaman Characterization of Molecular Switching in Organic Memristors
Emergence of organic memristors has been hindered by poor reproducibility, endurance stability scalability and low switching speed. Knowing the primary driving mechanism at the molecular scale will be the key to improve the robustness and reliability of such organic based devices.
Ferroelectric Thin Films Characterization by Spectroscopic Ellipsometry PbZr1-xTixO3 & Ba1-xSrxTiO3
BST thin film deposited onto polished sapphire substrates using Pulsed Laser Deposition (PLD)
Spectroscopic ellipsometry is a powerful technique to characterize the thickness and optical constants of complex ferroelectric stacks with high accuracy and precision. Specific modelling features in this study include the characterization of the anisotropic sapphire substrate, rough overlayer and layer inhomogeneity with depth.
Characterization of GeSbTe films by Spectroscopic Ellipsometry for Rewritable Optical Discs
The NIR range contains the most important information to analyze the different GeSbTe structures.
Spectroscopic ellipsometry is a powerful technique for high accuracy characterization of the thickness and optical constants of GeSbTe multilayer system for rewritable optical disc applications. It was shown that measurement in the NIR range gives better accuracy for the analysis of these types of material. The use of the multiple sample analysis reduces parameter correlations and errors for the thinnest layers. Owing to the advanced modeling features included in the DeltaPsi2 software, it is a straightforward procedure to analyze such structures even with layers deposited on both sides of the substrate.


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